Patent
Epitaxial reactor having a wall which is protected from deposits
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TLDR
In this article, an epitaxial growth reactor for processing wafers of a semiconductor material by exposing it to a reactive gas flow is described, where the mixture used is a hydrogen/argon mixture, the proportion of each of these gasses in the mixture being adjustable.Abstract:
An epitaxial growth reactor for processing wafers (1) of a semiconductor material by exposing it to a reactive gas flow. A wall (8) positioned at a slight distance from the wafer or group of wafers which is exposed to the reactive gas in a double wall, with a very narrow space (34) between the two walls, and this space is filled with a mixture whose composition can be varied and, consequently, the thermal conductivity can be adjusted. The mixture used is a hydrogen/argon mixture, the proportion of each of these gasses in the mixture being adjustable. The interior wall (8) of the double wall is a quartz plate and the exterior wall (9) is made of metal. Relevant FIG.: 1.read more
Citations
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References
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Induction heated reactor system for chemical vapor deposition
TL;DR: In this article, a chemical vapor deposition system which includes a generally closed reaction chamber having walls formed from a dielectric material is presented, where a susceptor for carrying a plurality of semiconductor wafers is positioned within the chamber.
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TL;DR: In this paper, an improved reaction chamber for CVD is proposed, which combines the advantageous features of the known horizontal and vertical reaction chambers while minimizing their respective short comings, and it is shown that the susceptor is rotatably and replaceably supported by a hollow rod, axially accommodating therein a thermocouple.
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