Experiments of producing slow positron beam
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In this paper, an apparatus for producing a slow-positron beam by moderating the decay positrons from a radioactive source using a W-vane moderator was described.Abstract:
In this article, we describe an apparatus for producing a slow-positron beam by moderating the decay positrons from a radioactive source using a W-vane moderator. The integral energy spectrum of the slow-positrons was measured with a retarding field analyser. The results are compared with that obtained using a Ni + MgO moderator at the same apparatus.read more
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Influence of GaN polarity and intermediate-temperature buffer layers on strain relaxation and defects
TL;DR: The dependence of strain relaxation and consequent generation defects on Gallium nitride (GaN) polarity and intermediate-temperature buffer layer (ITBL) has been observed by Raman scattering, photoluminescence (PL) and monoenergetic positron beam techniques as mentioned in this paper.
Journal ArticleDOI
Vacancy defects in epitaxial La0.7Sr0.3MnO3thin films probed by a slow positron beam
Shaowei Jin,Xianyi Zhou,Wenbin Wu,Changfei Zhu,H.M. Weng,Hong Wang,X.F. Zhang,Bangjiao Ye,Rongdian Han +8 more
TL;DR: In this paper, the line-shape S parameter of the epitaxial thin films deposited at different oxygen pressures was measured as a function of the implanting positron energy E. The surface morphology of the films was also characterized to analyse the open volume defects in the LSMO films.
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Microstructure of the Au/GaAs(110) interface probed using a variable-energy positron beam
TL;DR: In this paper, a mono-energetic positron beam is used to probe the Au/GaAs(110) interface by observing the Doppler broadening of the annihilation radiation as a function of beam energy.
Journal ArticleDOI
Low energy positron beam studies of WSix/n-Si(111)
TL;DR: In this paper, variable-energy positron beam studies have been made on WSi x film on n-Si(111) substrate, where the positron annihilation characteristi
Journal ArticleDOI
Annealing studies of Au/GaAs and Al/GaAs interfaces using a variable energy positron beam
TL;DR: In this article, a variable energy positron beam has been used to probe the metal-semiconductor interfaces by observing the Doppler broadening of the annihilation radiation, which is well fitted by a three-layer model, namely the metal layer, the interface region and the GaAs bulk.
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