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Chi Chung Ling

Researcher at University of Hong Kong

Publications -  92
Citations -  1969

Chi Chung Ling is an academic researcher from University of Hong Kong. The author has contributed to research in topics: Vacancy defect & Positron. The author has an hindex of 18, co-authored 92 publications receiving 1846 citations. Previous affiliations of Chi Chung Ling include Hong Kong University of Science and Technology.

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Defects in ZnO nanorods prepared by a hydrothermal method

TL;DR: ZnO nanorod arrays were fabricated using a hydrothermal method and found that, while the defect emission can be significantly reduced by annealing at 200 degrees C, the rods still have large defect concentrations as confirmed by their low positron diffusion length and short PL decay time constants.
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Undoped p-type ZnO nanorods synthesized by a hydrothermal method

TL;DR: In this paper, the authors demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90°C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth.
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Exceptionally Long Exciton Photoluminescence Lifetime in ZnO Tetrapods

TL;DR: In this article, the photoluminescence (PL) lifetime of ZnO tetrapods was shown to be an order of magnitude higher than the best results achieved in epilayers and single crystals.
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Hydrogen peroxide treatment induced rectifying behavior of Au∕n-ZnO contact

TL;DR: In this paper, the Au∕n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectrography, and deep level transient spectrograms, and the formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and formation of vacancy-type defects.