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Journal ArticleDOI

Field Quenching as Mechanism of Negative Differential Conductivity in Photoconducting CdS

TLDR
In this article, it was shown that the observed steep decrease of the electron density in photoconducting CdS(Al, Ag) with field in the range between 20 and 70 kV/cm is caused by a redistribution of holes from slow to fast recombination centers (field quenching).
Abstract
It is shown that the observed steep decrease of the electron density in photoconducting CdS(Al, Ag) with field in the range between 20 and 70 kV/cm is caused by a redistribution of holes from slow to fast recombination centres (field quenching). This redistribution is produced by field-enhanced ionization of holes from Coulomb-attractive slow recombination centers. The abrupt onset of the field quenching occurs because of the slow recombination traffic masking the fast center traffic until it becomes predominant. Competing infrared quenching reduces the masking effect and uncovers the earlier phases of field quenching already near 1 kV/cm (at 200 °K). Impact ionization and Zener extraction of holes from slow centers cannot explain the observed behavior. However, quantitative agreement between experiment and field quenching via field-enhanced ionization can be reached. Es wird gezeigt, das der steile Abfall der Elektronenkonzentration in photoleitendem CdS(Al, Ag) mit dem elektrischen Feld zwischen 20 und 70 kV/cm durch eine Umverteilung von Lochern von langsamen zu schnellen Rekombinationszentren verursacht wird (Feldtilgung). Diese Umverteilung wird durch „field-enhanced ionization” von Lochern aus Coulomb-attraktiven langsamen Zentren verursacht. Der abrupte Einsatz der Feldtilgung tritt auf, weil die langsame Rekombination eine Rekombination uber schnelle Zentren ver-deckt, bis diese uberwiegt. Eine konkurrierende Infrarottilgung vermindert den Verdeckungseffekt und macht eine fruhere Phase der Feldtilgung bereits in der Nahe von 1 kV/cm sichtbar. Eine Stosionisation oder Feldemission von Lochern aus langsamen Zentren kann das experimentell beobachtete Verhalten nicht erklaren; jedoch kann eine quantitative Ubereinstimmungzwisehen Experiment und Feldtilgung durch „field-enhanced ionization” erreicht werden.

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Citations
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Journal ArticleDOI

Field‐Enhanced Ionization

TL;DR: In this paper, Coulomb-attractive centers due to a deformation of the potential around the center and induced by the external field are estimated, using a classical model, and are given as a function of the external force.
Journal ArticleDOI

The CdS/Cu2 solar cell

TL;DR: In this article, the CdS/Cu 2 solar cell is described, the physics of its operation is analyzed, and its performance is reviewed. Special attention is given to recent progress in its development and probable limitations.
Journal ArticleDOI

Field quenching in photoconductive CdS as possible reason to enhance Voc and FF in thin‐film solar cells

TL;DR: In this paper, the Coulomb attractive hole traps were used to limit the field in the CdS/CdTe cell to 50 kV/cm, which is far below the field of typical pn-junctions of thin-film semiconductors and approaching tunneling fields that make junctions leaky.
References
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Journal ArticleDOI

Specific Negative Resistance in Solids

TL;DR: In this article, the inherent instability associated with a specific differential negative resistance in a solid is discussed for the two cases voltage-controlled and current-controlled differential negative negative resistance, and the effect of an external circuit is to inhibit stable filament formation in the case of current controlled differential negative resistances.
Journal ArticleDOI

Instabilities of current in III-V semiconductors

TL;DR: Although the quantitative agreement with theory is poor it is concluded that the current instability may possibly be due to the amplification of lattice optical modes.
Journal ArticleDOI

Determination of Electron Trapping Parameters

TL;DR: In this paper, a detailed investigation of different methods for determining electron trap parameters has been made on crystals of CdS−CdSe, for which correct values of the parameters can be calculated from Fermi-level analysis of either decay or TSC data.
Journal ArticleDOI

Anwendung elektro-optischer Effekte zur Analyse des elektrischen Leitungsvorganges in CdS-Einkristallen

TL;DR: In this paper, anodenseitig angrenzende Gebiet zeigt betrachtlich erhohte Leitfahigkeit, das das elektrische Feld im Durchschlagsbereich stark inhomogen ist Vor der Kathode, von dieser jedoch deutlich getrennt.
Journal ArticleDOI

Field‐Enhanced Ionization

TL;DR: In this paper, Coulomb-attractive centers due to a deformation of the potential around the center and induced by the external field are estimated, using a classical model, and are given as a function of the external force.
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