Journal ArticleDOI
Fluctuations in Schottky barrier heights
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TLDR
The double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors and the barrier height is shown to fluctuate in value due to the random nature of the impurity positions as discussed by the authors.Abstract:
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity.read more
Citations
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Journal ArticleDOI
Barrier inhomogeneities at Schottky contacts
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Journal ArticleDOI
Electrical properties of grain boundaries in polycrystalline compound semiconductors
Felix Greuter,Gianni Blatter +1 more
TL;DR: In this article, the authors describe both the origin and the consequences of the charge capturing at grain boundaries, where they summarise the present knowledge on the interface microstructure and its electrical properties.
Journal ArticleDOI
On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
Subhash Chand,Jitendra Kumar +1 more
TL;DR: In this paper, it is shown that the presence of a Gaussian distribution of barrier heights is responsible for the apparent decrease of the zero-bias barrier height and nonlinearity in the activation energy plot.
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Investigation of the size-scaling behavior of spatially nonuniform barrier height contacts to semiconductor surfaces using ordered nanometer-scale nickel arrays on silicon electrodes
Robert C. Rossi,Nathan S. Lewis +1 more
TL;DR: In this article, ordered bilayers of close-packed polystyrene spheres were deposited onto (100)-oriented n-type single crystal Si surfaces, forming a physical mask through which Ni was evaporated to produce regularly spaced and regularly sized Si/Ni contacts.
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Frontiers of research in photoelectrochemical solar energy conversion
TL;DR: In this article, the authors provide an outlook for future research in semiconductor electrochemistry, and provide an overview of two selected research projects at the frontier of photoelectrochemistry.
References
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Shapes of Inhomogeneously Broadened Resonance Lines in Solids
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Theory of conduction in ZnO varistors
TL;DR: In this article, a theory was presented which quantitatively accounts for the important features of conduction in ZnO-based metaloxide varistors, which predicts a varistor breakdown voltage of 3.2 V/grain boundary for n0=1017 carriers' cm−3 and T=300 K.
Journal ArticleDOI
The physics of zinc oxide varistors
TL;DR: In this paper, the authors present a physical description of the action of ZnO varistors, which are complex ceramic bodies of zinc oxide grains sintered in an oxide flux; their conductivity is very low at low voltage, but becomes high after a certain breakdown voltage is reached.