Journal ArticleDOI
GaAs solid state detectors for particle physics
S.P. Beaumont,R. Bertin,C. N. Booth,Craig Buttar,L. Carraresi,Federico Cindolo,Marcello Colocci,F. Combley,Saverio D'Auria,C. Del Papa,M. Dogru,M. Edwards,Francesco Fiori,F. Foster,A. Francescato,Y. Hou,Peter A. Houston,B.K. Jones,J.G. Lynch,B. Lisowski,J. Matheson,Filippo Nava,M. Nuti,Val O'Shea,P. G. Pelfer,C. Raine,J. Santana,I.J. Saunders,Paul Seller,P.H. Sharp,I.O. Skillikorn,T. J. Sloan,Kevin M. Smith,Nicola Tartoni,I. ten Have,R. M. Turnbull,Anna Vinattieri,Antonino Zichichi +37 more
TLDR
In this article, the authors report on progress with Schottky diode and p-i-n diode GaAs detectors for minimum ionising particles and show that the radiation hardness and potential speed of simple diodes is more than competitive with silicon detector.Abstract:
We report on progress with Schottky diode and p-i-n diode GaAs detectors for minimum ionising particles. The radiation hardness and potential speed of simple diodes is shown to be more than competitive with silicon detector. A discussion is given of the present understanding of the charge transport mechanism in the detectors since it influences their charge collection efficiency. Early results from microstrip detectors are also described.read more
Citations
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Journal ArticleDOI
Room-temperature compound semiconductor radiation detectors
Douglas S. McGregor,Haim Hermon +1 more
TL;DR: A summary of the present status of several compound semiconductor radiation detectors, including detectors fabricated from GaAs, HgI2, CdTe and PbI2 can be found in this paper.
Journal ArticleDOI
Diamond detectors in particle physics
TL;DR: In this article, the authors review the history of diamond detectors and describe their current state of development, and discuss the evidence which proves the resistance of these detectors to damage by various forms of incident radiation.
Journal ArticleDOI
Performance of a new ohmic contact for GaAs particle detectors
M. Alietti,Claudio Canali,Antonio Castaldini,Anna Cavallini,A. Cetronio,C. Chiossi,Saverio D'Auria,C. Del Papa,C. Lanzieri,Felice Nava,P. Vanni +10 more
TL;DR: In this paper, a non-injecting, non-alloyed ohmic contact was proposed to improve the performance of GaAs detectors beyond the voltage bias required for full active detection.
Journal ArticleDOI
The effect of incremental gamma-ray doses and incremental neutron fluences upon the performance of self-biased 10B-coated high-purity epitaxial GaAs thermal neutron detectors
TL;DR: In this paper, 10 B-coated thermal detectors were systematically irradiated at fixed grid locations near the core of a 2MW research reactor to determine their operational neutron dose threshold, and the main cause of detector failure was determined to result from the 10 B(n,α) 7 Li reaction product damage.
Journal ArticleDOI
X-ray detection using bulk GaAs
TL;DR: In this paper, the Schottky barrier detector was used for X-ray detection in the 10-100 keV band with a leakage current of 7 nA mm−2 at 20°C and was not attributable to surface leakage.
References
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Journal ArticleDOI
A preliminary study of GaAs solid-state detectors for high-energy physics
R. Bertin,Saverio D'Auria,C. Del Papa,Francesco Fiori,B. Lisowski,Val O'Shea,P.G. Pelfer,Kevin M. Smith,Antonino Zichichi +8 more
TL;DR: In this article, the first phase of a study of GaAs as a base material for solid-state detectors has been completed, and the main motivation behind this study is the greater radiation resistance of integrated circuits made of GAs compared with Si.
Journal ArticleDOI
Deposition of high quality GaAs films at fast rates in the LP-CVD system
TL;DR: In this paper, the authors investigated the deposition behavior of GaAs in the Ga-HCl-AsH3-H2 system and found that the earlier reported reduction in growth rate with total pressure is reversed below 104 Pa.
Journal ArticleDOI
HIGH-RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n-GaAs.
TL;DR: In this paper, surface barrier p−n junction diodes made from high-purity n−GaAs grown by liquid phase epitaxy, were operated as α-particle and low-energy γ-ray detectors over the range 77-373°K.
Journal ArticleDOI
Gallium-arsenide charge-sensitive preamplifier for operation in a wide low-temperature range
TL;DR: In this paper, a charge-sensitive preamplifier for temperature operation between 1 and 120 K has been developed and evaluated, which uses double-gate GaAs MESFETs selected for their low 1/ƒ noise.
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Charge transport properties of undoped SI LEC GaAs solid-state detectors
S.P. Beaumont,R. Bertin,C. N. Booth,Mara Bruzzi,Craig Buttar,L. Carraresi,Federico Cindolo,Marcello Colocci,F. Combley,Saverio D'Auria,S. DeGennaro,D. Del Papa,M. Dogru,M. Edwards,Francesco Fiori,F. Foster,A. Francescato,Y. Hou,Peter A. Houston,B.K. Jones,J.G. Lynch,B. Lisowski,J. Matheson,Filippo Nava,M. Nuti,Val O'Shea,P.G. Pelfer,M. Pischedda,C. Raine,J. Santana,I.J. Saunders,Paul Seller,I.O. Skillikorn,T. J. Sloan,Kevin M. Smith,Nicola Tartoni,I. ten Have,R. M. Turnbull,Anna Vinattieri,Antonino Zichichi +39 more