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Patent

Growth-orientation of crystals by raster scanning electron beam

Fred J. Radd, +2 more
TLDR
In this paper, a method of grain-orienting the crystal structure of a layer of semiconductor material by application of a raster scanning electron beam to a layer which has been previously formed on a substrate, such as by sputter-plasma film deposition, is described.
Abstract: 
A method of grain-orienting the crystal structure of a layer of semiconductor material by application of a raster scanning electron beam to a layer of polycrystalline semiconductor material which has been previously formed on a substrate, such as by sputter-plasma film deposition. The method comprises electron beam lithography computer-applied to the crystal growth and orientation of a polycrystalline thin sheet of silicon or other semiconductor material.

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Patent

Method of crystallizing amorphous material with a moving energy beam

John C. C. Fan, +1 more
TL;DR: In this paper, an improved method for crystallizing amorphous material with a moving beam of energy is disclosed, in which the energy beam is scanned in a manner to provide controlled, continuous motion of the crystallization front.
Patent

Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction

Yasuhiko Takemura
TL;DR: In this article, a silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing.
Patent

Method for production of semiconductor devices

Junji Sakurai
TL;DR: In this article, a method for the conversion of a non-single crystalline semiconductor to a single-layer single-crystal semiconductor using an energy ray irradiation process was proposed.
Patent

Process for doping semiconductors

Michel Bruel, +1 more
TL;DR: In this article, a process for doping semiconductors, comprising the successive steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of bombarding particles, which are in particular non-dopant, so as to cause the doping particles to penetrate in the substrate.
Patent

Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material

Gilbert A. Hawkins
TL;DR: In this article, a method for depositing and heating the semiconductor material on the substrate, where the substrate is composed of a layer of organic polymer, a metal or metal alloy, and a dielectric material, is described.
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Patent

Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof

John C. C. Fan, +1 more
TL;DR: In this paper, a method for improving the crystallinity of semiconductor films by scanning the surface of such films with a shaped, focused laser beam is described, where the laser is matched to the film so that the beam delivers sufficient energy to heat the film above a temperature at which crystallization occurs along the scan track.
Patent

Plasma spraying process for preparing polycrystalline solar cells

Richard J. Janowiecki, +2 more
TL;DR: In this article, a doped silicon powder is injected into a high temperature ionized gas (plasma) to become molten and to be sprayed onto a low-cost substrate.
Patent

Solar cell comprising semiconductive whiskers

Diepers Heinrich Dr
TL;DR: In this paper, a solar cell with semiconductor body consisting of single crystal semiconductor whiskers which are grown on a substrate surface permitting relatively inexpensive manufacture and high efficiency of the solar cell is disclosed.
Patent

Process for fabricating polycrystalline inp-cds solar cells

Kenneth W. Zanio, +1 more
TL;DR: In this paper, the authors describe a compound semiconductor solar cell and fabrication process therefor wherein both the P and N-type layers of the cell are polycrystalline semiconducting material and have large crystallites with grain boundaries of similar dimensions and spacings.
Patent

Controlled temperature polycrystalline silicon nucleation

Theodore I. Kamins, +1 more
TL;DR: In this paper, the diffusivity of an impurity in a layer of polycrystalline silicon is controlled by forming the poly-stalline polysilicon on a thin nucleating layer.