Journal ArticleDOI
High-temperature Schottky diodes with thin-film diamond base
TLDR
Schottky diodes were formed using gold contacts to chemically cleaned boron-doped homoepitaxial diamond films as mentioned in this paper, and they incorporated ohmic contacts formed by annealing Au(70 nm)/Ti(10 nm) layers in air at 580 degrees C.Abstract:
High-temperature (500-580 degrees C) current-voltage (I-V) characteristics of gold contacts to boron-doped homoepitaxial diamond films prepared using a plasma-enhanced chemical vapor deposition (CVD) method are described. Schottky diodes were formed using gold contacts to chemically cleaned boron-doped homoepitaxial diamond films. These devices incorporate ohmic contacts formed by annealing Au(70 nm)/Ti(10 nm) layers in air at 580 degrees C. The experiments with homoepitaxial diamond films show that the leakage current density increases with the contact area. This implies that a nonuniform current distribution exists across the diode, presumably due to crystallographic defects in the diamond film. As a result, Au contacts with an area >1 mm/sup 2/ are essentially ohmic and can be used to form back contacts to Schottky diodes. Schottky diodes fabricated in this matter also show rectifying I-V characteristics in the 25-580 degrees C temperature range. >read more
Citations
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Journal ArticleDOI
Boron-Doped Homoepitaxial Diamond Layers: Fabrication, Characterization, and Electronic Applications
T. H. Borst,O. Weis +1 more
TL;DR: In this article, a series of boron-doped homoepitaxial diamond layers of high crystal quality have been grown on (100)-cut diamond substrates using the microwave plasma CVD method.
Journal ArticleDOI
High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method
TL;DR: In this article, the selective growth of boron-doped homoepitaxial diamond films was achieved using sputtered SiO/sub 2/ as a masking layer.
Journal ArticleDOI
Piezoresistivity in vapor-deposited diamond films
TL;DR: In this paper, the authors report the observation of a very large piezoresistive effect in both polycrystalline and homoepitaxial chemical-vapordeposited diamond films.
Book ChapterDOI
Chapter 6 Diamond-based radiation and photon detectors
TL;DR: In this article, the authors discuss different forms of diamond detectors for photodetection and ionising radiation detection applications, and discuss the problem of effective doping of diamond films for many device structures, and this remains a difficult area.
Journal ArticleDOI
Diamond semiconductor technology for RF device applications
TL;DR: A comprehensive review of diamond electronics from the RF perspective is presented in this article, where the potential, limitations and current status of diamond semiconductor devices as well as its suitability for RF device applications are investigated.
References
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Journal ArticleDOI
High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond
TL;DR: In this article, point contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond and the first report of diamond transistors that have power gain was made.
Journal ArticleDOI
The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film
S.A. Grot,G.S. Gildenblat,C. W. Hatfield,C.R. Wronski,Andrzej Badzian,Teresa Badzian,Russell Messier +6 more
TL;DR: In this paper, both doped and undoped homoepitaxial diamond films were fabricated using microwave plasma-enhanced chemical vapor deposition (CVD), and the conductivity of the diamond film is strongly affected by the surface treatment.
Journal ArticleDOI
Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film
TL;DR: In this article, the Schottky diodes were fabricated on boron-doped diamond epitaxial films using these contacts and investigated their properties, such as the properties of the ohmic and Schottkky properties.
Journal ArticleDOI
Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films
TL;DR: Schottky diodes were fabricated using gold and aluminum contacts to thin diamond films obtained by a microwave plasma assisted chemical vapor deposition process as mentioned in this paper, and the currentvoltage and capacitance-voltage-frequency characteristics of these devices are similar to those fabricated on a crystalline diamond base formed by traditional ultrahigh pressure process.
Journal ArticleDOI
Ohmic contacts to semiconducting diamond
TL;DR: In this article, a solid-state reaction process for producing ohmic contacts to polished natural semiconducting diamond surfaces is discussed, which attempts to systematically characterize the processes which occur when metallic films of known thickness are deposited on a smooth diamond surface and annealed in the solid state under controlled conditions Annealed tantalum/gold and titanium/gold deposits on