Patent
High voltage Schottky barrier diode
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TLDR
In this article, an improved high voltage Schottky barrier diode is proposed, which includes a semiconductor layer having two adjacent sublayers of the same type conductivity but different doping concentrations.Abstract:
An improved high voltage Schottky barrier diode includes a semiconductor layer having two adjacent sublayers of the same type conductivity but different doping concentrations. A plurality of isolated discrete regions of a second type conductivity opposite to that of the first are provided along the boundary region between the sublayers and beneath the Schottky junction. The invention results in an improved high voltage Schottky diode in which the reverse characteristics are substantially enhanced.read more
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References
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Patent
High voltage schottky barrier diode
TL;DR: In this paper, a surface barrier diode is provided on one surface with an annular region 16 forming a PN junction with the surrounding region 12 to increase the breakdown voltage of the device, a further annular regions 18 being situated within the region 16 and forming a further Pn junction therewith, and the surface barrier electrode 19 is provided in contact with all three regions 12, 16, 18.
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Method for fabricating a gridded Schottky barrier field effect transistor
TL;DR: In this article, a method for fabricating a gridded Schottky barrier field effect transistor and to the transistor produced thereby is described by means of a single high resolution mask which does not require alignment to any reference line.
Patent
Surface barrier junction diode
TL;DR: In this paper, a surface barrier junction diode is disclosed in which the impurity concentration of the epitaxial layer immediately beneath the Schottky barrier is higher than that of the other regions.
Patent
Improved surface barrier transistor
TL;DR: In this paper, a semiconductor device consisting of a first zone of semiconductive material containing impurity atoms of the acceptor type, a second zone of relatively highly conductive material in contact with the metal layer, and a third zone containing a high concentration of impurities of either the donor or acceptor types is described.