Journal ArticleDOI
Hole conduction in Si3N4 films on Si
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TLDR
In this paper, the dominant hole conduction was observed in thin Si3N4 films with holes being injected from either aluminum or gold electrodes and was confirmed by employing a shallow junction diode detector.Abstract:
Dominant hole conduction is observed in thin Si3N4 films deposited on silicon with holes being injected from either aluminum or gold electrodes. Hole transport is confirmed by employing a shallow junction diode detector. Such a diode can serve also as excellent means for separating conduction currents from transient displacement currents under pulsed conditions.read more
Citations
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Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content
Xin Guo,Tso-Ping Ma +1 more
TL;DR: In this paper, the authors examined the gate leakage current as a function of the oxygen and nitrogen contents in ultrathin silicon oxynitride films on Si substrates and showed that, provided that electron tunneling is the dominant current conduction mechanism, the leakage current in the direct tunneling regime increases monotonically with the oxygen content for a given equivalent oxide thickness, such that pure silicon nitride passes the least amount of current while pure silicon oxide is the leakiest.
Journal ArticleDOI
The preparation, characterization and applications of silicon nitride thin films
Journal ArticleDOI
Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures
TL;DR: In this article, the voltage and time-dependence of tunneling currents in polysilicon-oxide-nitride-oxide semiconductor structures have been investigated using a shallow junction technique.
Journal ArticleDOI
Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling
M. Herrmann,Andreas Schenk +1 more
TL;DR: In this article, a multiphonon-assisted tunneling mechanism was proposed where electrons stored on the floating gate tunnel to oxide traps, then are emitted into the nitride.
Journal ArticleDOI
The electronic properties of plasma‐deposited films of hydrogenated amorphous SiNx (0<x<1.2)
TL;DR: In this paper, the authors present the results of a comprehensive series of measurements on glow discharge (plasma)deposited silicon nitride films SiNx:H, with x in the range 0
References
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Journal ArticleDOI
Two-band conduction of amorphous silicon nitride
TL;DR: In this article, a two-band Si3N4 impurity conduction model with silicon microcrystals is examined, the latter serving as Poole-Frenkel centres in the nitride volume as well as trapping and recombination centers in the regions close to the electrodes.
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Hole injection into silicon nitride: Interface barrier energies by internal photoemission
D. J. DiMaria,P. C. Arnett +1 more
TL;DR: In this article, the dominant hole internal photoemission mechanism was used to measure the energy barrier at the interfaces of metal-silicon-nitride silicon structures as a function of metal electrode material and substrate doping.
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Electrical Characteristics of Silicon Nitride Films Prepared by Silane‐Ammonia Reaction
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Hole conduction and valence‐band structure of Si3N4 films on Si
Z. A. Weinberg,R. A. Pollak +1 more
TL;DR: In this article, X-ray photo-emission spectroscopy (XPS) was performed on thin films of Si3N4 deposited on Si using carrier injection from low-energy corona ions and a shallow junction detector.
Journal ArticleDOI
Electron and hole transport in CVD Si3N4 films
TL;DR: In this paper, it was shown that holes are more mobile than electrons in chemically vapor deposited (CVD) Si3N4, and that hole traps are perhaps shallower than electron traps, hence the enhanced hole conduction in silicon nitride.