Journal ArticleDOI
Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content
Xin Guo,Tso-Ping Ma +1 more
TLDR
In this paper, the authors examined the gate leakage current as a function of the oxygen and nitrogen contents in ultrathin silicon oxynitride films on Si substrates and showed that, provided that electron tunneling is the dominant current conduction mechanism, the leakage current in the direct tunneling regime increases monotonically with the oxygen content for a given equivalent oxide thickness, such that pure silicon nitride passes the least amount of current while pure silicon oxide is the leakiest.Abstract:
It is widely known that the addition of nitrogen in silicon oxide, or the addition of oxygen in silicon nitride, affects its reliability as a gate dielectric. The authors examine the gate leakage current as a function of the oxygen and nitrogen contents in ultrathin silicon oxynitride films on Si substrates. It is shown that, provided that electron tunneling is the dominant current conduction mechanism, the gate leakage current in the direct tunneling regime increases monotonically with the oxygen content for a given equivalent oxide thickness (EOT), such that pure silicon nitride passes the least amount of current while pure silicon oxide is the leakiest.read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Patent
Incorporation of nitrogen into high k dielectric film
TL;DR: In this article, a high k dielectric film and methods for forming the same are disclosed and the high k material includes two peaks of impurity concentration, particularly nitrogen, such as at a lower interface and upper interface.
Journal ArticleDOI
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations
TL;DR: Using an accurate direct-tunneling gate-current model and specifications from the International Technology Roadmap for Semiconductors (ITRS), guidelines for the selection of gate dielectrics to satisfy the projected off-state leakage current requirements of future high-performance and low-power technologies are provided.
Journal ArticleDOI
Material and process limits in silicon VLSI technology
TL;DR: Some of the the most challenging materials and process issues to be faced in the future are described and where possible solutions are known, describes these potential solutions.
Journal ArticleDOI
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric
Yee-Chia Yeo,Qiang Lu,Wen-Chin Lee,Wen-Chin Lee,Tsu-Jae King,Chenming Hu,X.W. Wang,Xin Guo,Xin Guo,Tso-Ping Ma +9 more
TL;DR: In this paper, the authors present a study on the characterization and modeling of direct tunneling gate leakage current in both N and P-type MOSFETs with ultrathin silicon nitride (Si/sub 3/N/sub 4/) gate dielectric formed by the jet-vapor deposition (JVD) technique.
References
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Journal ArticleDOI
Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film
TL;DR: In this article, a formula for the electric tunnel effect through a potential barrier of arbitrary shape existing in a thin insulating film was derived for a rectangular barrier with and without image forces, where the true image potential was considered and compared to the approximate parabolic solution derived by Holm and Kirschstein.
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Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.
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Making silicon nitride film a viable gate dielectric
TL;DR: In this article, high-quality silicon nitride (or oxynitride) films made by a novel jet vapor deposition (JVD) technique are described, which utilizes a high-speed jet of light carrier gas to transport the depositing species onto the substrate to form the desired films.
Journal ArticleDOI
Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe
TL;DR: In this paper, a trapezformige potentialstufe werden Durchlassigkeit D and elektrischer Tunnelstrom I als Funktion der Spannung V berechnet.
Journal ArticleDOI
Properties of Si x O y N z Films on Si
TL;DR: The properties of silicon nitride, oxynitride, and oxide films formed by the pyrolysis of various mixtures of,, and are presented The variation in physical, optical, and electrical properties of this oxynitized series is examined The electrical and passivation properties of these films on Si are examined and compared with oxides as discussed by the authors.