Proceedings ArticleDOI
Immersion lithography; its potential performance and issues
Soichi Owa,Hiroyuki Nagasaka +1 more
- Vol. 5040, pp 724-733
TLDR
In this paper, it was shown that water (n = 144) has been found as the best liquid for the ArF immersion lithography in the case of 193nm exposure, and that water has an equivalent performance to F2 (157nm) dry (NA=085 to 093).Abstract:
Imaging performance and issues of immersion lithography are discussed with the results of the recent feasibility studies Immersion lithography has advantage in the numerical aperture of optics by a factor of refractive index n of the liquid filled into the space between the bottom lens and wafer In case of 193nm exposure, water (n = 144) has been found as the best liquid It is shown, by using imaging simulations, that ArF (193nm) immersion lithography (NA=105 to 123) has equivalent performance to F2 (157nm) dry (NA=085 to 093) lithography Six fundamental issues in the ArF immersion lithography are investigated and studied Results of the study indicate that there are no “show stoppers” that prevent going into the next phase of feasibility studyread more
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Patent
Projection optical system and method for photolithography and exposure apparatus and method using same
Yasuhiro Omura,Hironori Ikezawa +1 more
TL;DR: Optical Projection System and Method for Photolithography as mentioned in this paper is a lithographic immersion projection system and method for projecting an image at high resolution over a wide field of view, which includes a final lens which decreases the marginal ray angle of the optical path before light passes into the immersion liquid to impinge on the image plane.
Patent
Lithographic apparatus, and device manufacturing method
Maarten Marinus Johannes Wilhelmus Van Herpen,Vadim Yevgenyevich Banine,Johannes Peterus Henricus De Kuster,Johannes Hubertus Josephina Moors,Lucas Henricus Johannes Stevens,Bastiaan Theodoor Wolschrijn,Yurii Victorovitch Sidelnikov,Marc Hubertus Lorenz Van Der Velden,Wouter Anthon Soer,Thomas Stein,K Kurt Gielissen +10 more
TL;DR: In this article, a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is described, which includes a first radiation dose detector and a second radiation dose detectors, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux.
Patent
Exposure apparatus, and device manufacturing method
TL;DR: In this paper, an exposure apparatus for emitting exposure light onto a substrate via a projection optical system and a liquid to expose the substrate includes a supply pipe which supplies the liquid, a recovery pipe which recovers the liquid; a connection pipe which connects the supply pipe and the recovery pipe; and a switching device which switches a flow path of the liquid so that when liquid supply is stopped, the liquid that has flowed into the input pipe flows to the output pipe via the connection pipe.
Patent
Apparatus and method for immersion lithography
TL;DR: In this article, an immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly coupled to, and moving along, the lens assembly.
Patent
Catadioptric Projection Objective
TL;DR: A catadioptric projection objective for projecting a pattern arranged in the object plane of a projection objective into the image plane of the projection objective, having: a first objective part for projecting an object field lying in the shape of an object into a first real intermediate image; a second objective for generating a second real intermediate intermediate image with the radiation coming from the first objective, a third objective part to generate a third real intermediate images with the radii from the second objective part; and a fourth objective part in this article.
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