Journal ArticleDOI
Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing
Akira Ajisawa,Naoki Oda +1 more
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In this article, the performance of Hg1−xCdxTe diodes with different carrier concentrations in p type materials have been investigated in detail by model fitting, taking into account dark current mechanisms.Abstract:
Hg1−xCdxTe diodes (x∼0.22) with different carrier concentrations in p type materials have been fabricated by employing an ion-implantation technique. The performances of the diodes, prior to and after low temperature postimplantation annealing, have been investigated in detail by model fitting, taking into account dark current mechanisms. Prior to the annealing process, dark currents for diodes with relatively low carrier concentrations are found to be limited by generation-recombination current and trap-assisted tunneling current, while dark currents for diodes with higher carrier concentrations are limited by band-to-band tunneling current. These dark currents in both diodes have been dramatically decreased by the low temperature annealing at 120∼150°C. From the model fitting analyses, it turned out that trap density and the density of the surface recombination center in the vicinity of the pn junction were reduced by one order of magnitude for a diode with lower carrier concentration and that the carrier concentration profile in a pn junction changed for a diode with higher carrier concentration. The improvements are explained by changes in both carrier concentration profile and pn junction position determined by interaction of interstitial Hg with Hg vacancy in the vicinity of the junction during the annealing process.read more
Citations
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Journal ArticleDOI
Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
TL;DR: In this paper, the authors measured the R-V curves of n-onp Hg1−CdxTe long-wavelength infrared photodiodes forming 128-element array and fitted them by the simultaneousmode nonlinear fitting program.
Journal ArticleDOI
Comparison of the performance of quantum well and conventional bulk infrared photodetectors
TL;DR: In this article, the performance of two types of quantum well infrared photodetectors (QWIPs) as compared o other types of semiconductor infrared detectors are presented.
Journal ArticleDOI
Analysis of dark current contributions in mercury cadmium telluride junction diodes
TL;DR: An analytical approach to analyze the dark currentvoltage and dynamic impedance vs reverse bias voltage (Rd-V) characteristics of an HgCdTe junction diode is presented in this article.
Comparison of the performance of quantum well and conventional bulk infrared photodetectors.
Antoni Rogalski,Robert Ciupa +1 more
TL;DR: In this article, the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared detectors are investigated, including HgCdTe photonductors and photodiodes, PbSnTe photodes, Schottky barrier photoemissive detectors and doped silicon detectors.
References
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Journal ArticleDOI
Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.
Journal ArticleDOI
Calculation of intrinsic carrier concentration in Hg1−xCdxTe
G. L. Hansen,J. L. Schmit +1 more
TL;DR: In this paper, the Kane nonparabolic approximation for band structure and recent measurements of the heavy hole mass mh and energy gap Eg were used to calculate the intrinsic carrier concentration in Hg1−xCdxTe.
Journal ArticleDOI
Defects, diffusion and activation in ion implanted HgCdTe
TL;DR: In this paper, the current understanding in junction formation by ion implantation in HgCdTe material is discussed, and a variety of junction different in nature and electrical profile have been demonstrated.
Journal ArticleDOI
Tunneling and dark currents in HgCdTe photodiodes
TL;DR: In this paper, the dc characteristics of front-illuminated ion-implanted n+ on bulk p−xCdxTe with x≊0.22, operating at 77 K, are modeled with three distinct mechanisms that dominate the dark current: diffusion current is the dominant current down to 60 K.
Journal ArticleDOI
MBE HgCdTe heterostructure p-on-n planar infrared photodiodes
Jose M. Arias,John G. Pasko,Majid Zandian,S. H. Shin,G. M. Williams,L. O. Bubulac,R. E. De Wames,W. E. Tennant +7 more
TL;DR: In this article, the p-on-n planar HgCdTe/Hg1−xCdxTe (x