Journal ArticleDOI
In-Depth Profiles of Oxide Films on GaAs Studied by XPS
Reads0
Chats0
TLDR
In this paper, the chemical composition of the thermal and anodic oxide of GaAs has been studied by XPS in conjunction with argon ion sputtering, and both the amount and the chemical state of each elemental species in the oxides were obtained.Abstract:
Quantitative depth profiles of chemical composition of the thermal and the anodic oxide of GaAs have been studied by XPS in conjunction with argon ion sputtering. By analyzing the XPS spectra with taking account of the sputtering effects, both the amount and the chemical state of each elemental species in the oxides were obtained. In the thermal oxidation below 530°C in air, Ga2O3 was produced as a primary product and both the amounts of the evaporated-As and the accumulated-As increased with increasing oxide thickness. XPS spectra from the thermal oxides grown at 900°C in air or grown with As at ~530°C suggested that the products contained GaAsO4. The anodic oxidation resulted in films that had an As2O3/Ga2O3 ratio of about 1. The widths of the transition region between the ~500 A thick oxide and GaAs were about 70 A for the anodic oxides and 200 A for the thermal oxides.read more
Citations
More filters
Journal ArticleDOI
Structure and reactivity of GaAs surfaces
TL;DR: The surface Ga atoms try to assume a trivalent planar sp 2 configuration with three mutually perpendicular p-bonds, while the surface As atoms assume a three-dimensional p 3 configuration as mentioned in this paper.
Journal ArticleDOI
Raman scattering from anodic oxide-GaAs interfaces
TL;DR: In this article, the authors studied the interface between anodically grown oxide films and gallium arsenide substrates using Raman backscattering and found that the thermally induced solid-state interfacial reaction, As2O3+2GaAs→Ga2O 3+4As, is responsible for the presence of arsenic at the oxide-semiconductor interface following annealing.
Journal ArticleDOI
Long-time air oxidation and oxide-substrate reactions on GaSb, GaAs and GaP at room temperature studied by X-ray photoelectron spectroscopy
TL;DR: In this article, the room temperature oxidation behavior of GaSb, GaAs and GaP has been monitored for a period of 3 years using X-ray photoelectron spectroscopy.
Book ChapterDOI
Oxide/III-V Compound Semiconductor Interfaces
TL;DR: In this paper, the authors provide insight into the mechamisms of oxide growth and how the oxide/III-V interface is formed, which is caused by a competition between the two or more elements of the III-V substrate, for example, one element may diffuse, evaporate or dissolve faster than the other.
Journal ArticleDOI
Oxide layers on GaAs prepared by thermal, anodic and plasma oxidation: In-depth profiles and annealing effects
TL;DR: In this article, the in-depth profiles of oxide layers prepared by thermal, anodic or plasma oxidation were investigated by means of simultaneous Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS) measurements.