Journal ArticleDOI
In situ four-point conductivity and Hall effect apparatus for vacuum and controlled atmosphere measurements of thin film materials
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An ultrahigh vacuum (UHV) chamber equipped with a fixture for in situ four-point Van Der Pauw conductivity and Hall effect measurements has been constructed and attached to a multichamber thin film synthesis and characterization system as mentioned in this paper.Abstract:
An ultrahigh vacuum (UHV) chamber equipped with a fixture for in situ four-point Van Der Pauw conductivity and Hall effect measurements has been constructed and attached to a multichamber thin film synthesis and characterization system. The combined systems allow for film synthesis and characterization of microstructure, chemical composition, morphology, and electronic transport properties without air exposure. The four-point measurement fixture features spring-loaded probes for electrical contacts and temperature measurement and a sample docking mechanism designed to minimize probe damage to the films. The electronics were designed for measurement of high resistance samples. Measurements can be made at sample temperatures from 25 to 450 °C in selected gas environments from UHV to atmospheric pressure. The design and performance of the system are reported, and representative results on the electronic transport properties of n-type Si (100) and tungsten oxide films on sapphire are presented.read more
Citations
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Journal ArticleDOI
Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films
TL;DR: The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties.
BookDOI
Metal oxide nanomaterials for chemical sensors
TL;DR: Gurlo et al. as discussed by the authors investigated the gas sensing mechanism in chemiresistors based on semiconducting metal oxides and provided a mechanistic description of surface reactions involved in gas sensing.
Journal ArticleDOI
Mechanism of Hydrodeoxygenation of Acrolein on a Cluster Model of MoO3
TL;DR: In this paper, the potential energy surface for reactions of acrolein on a Mo3O9 cluster model of the MoO3 surface was explored, and a mechanism in which coordinatively unsaturated Mo sites (i.e., oxygen vacancies) selectively chemisorb acroleins was proposed, in which the active phase of the catalyst is a reduced hydrogen bronze, HxMoO3−y and surface hydroxyl sites are occupied when x is in the range 1.1−1.2.
Journal ArticleDOI
Growth and structure of silver and silver oxide thin films on sapphire
TL;DR: In this article, the growth and epitaxy of Ag and Ag2O films on r-cut sapphire surfaces were reported for several different growth conditions, including electron beam evaporation in vacuum, in a molecular O2 background, and in the presence of an electron cyclotron resonance (ECR) oxygen plasma.
Journal ArticleDOI
Structure, conductivity, and optical absorption of Ag2−xO films
TL;DR: In this paper, an electron cyclotron resonance (ECR) oxygen plasma was used to deposit Ag 2− x O films with a range of stoichiometries onto r-plane sapphire substrates.
References
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SnO2 sensors: current status and future prospects☆
TL;DR: A survey on the current status and future prospects in research and development of SnO2-based sensors is given in this paper, where the influence of contact geometry and crystallinity on the sensor response signal is outlined.
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Quick reference manual for silicon integrated circuit technology
TL;DR: In this paper, the authors present IC Structures and Wafer Properties Conductivity of Diffused Layers Properties of p-n Junctions Metal-Semiconductor Junctions Surface Properties MOS Reliability Index.
Journal ArticleDOI
Stoichiometry and microstructure effects on tungsten oxide chemiresistive films
TL;DR: In this article, high-oriented tungsten trioxide thin films have been grown on (0, 1 2 ) r-cut sapphire substrates using reactive rf magnetron sputtering of a target in various oxygen/argon mixtures.
Journal ArticleDOI
Selectivity in high-temperature operated semiconductor gas-sensors
M. Fleischer,H. Meixner +1 more
TL;DR: In this article, the authors show to which extent strategies to achieve selective gas detection with one single sensor are applicable with high temperature operated metal oxides like Ga2O3 developed in the last years.