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Influence of dislocations on diffusion kinetics in solids with particular reference to the alkali halides

L. G. Harrison
- 01 Jan 1961 - 
- Vol. 57, pp 1191-1199
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This article is published in Transactions of The Faraday Society.The article was published on 1961-01-01. It has received 859 citations till now. The article focuses on the topics: Halide.

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Triple junction and grain boundary diffusion in the Ni/Cu system

TL;DR: In this paper, atom probe tomography in nanocrystalline Ni/Cu bilayers was used to measure atomic transport along triple junctions (TJs) and grain boundaries (GBs).
Journal ArticleDOI

An in situ X-ray diffraction study of precipitation from a supersaturated solid solution: The γ' precipitate in a Ni-12.5% Si alloy

TL;DR: In this article, an in situ X-ray diffraction study of the precipitation reaction of a supersaturated solid solution single crystal of Ni-12.5 at moderately high temperatures was performed.
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Bulk self-diffusion of Hf181 in monocrystalline alpha hafnium-2.1% zirconium

TL;DR: In this article, self-diffusion coefficients at temperatures between 1220 and 1610°C for diffusion parallel and perpendicular to the c axis, respectively, were expressed as follows: D∥c = 0.86 exp[(−88,400 ± 3200)/RT] cm2/sec
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Effect of segregation on the shape of grain boundary diffusion profiles : Experimental study of the Cu-Ag system

TL;DR: Grain boundary diffusion of Ag in pure copper and in a Cu-0.091 at.% Ag alloy has been investigated in this paper, where an experimental method to separate the effect of different grain boundaries present in the samples was described.
Journal ArticleDOI

A new method for the determination of the diffusion-induced concentration profile and the interdiffusion coefficient for thin film systems by Auger electron spectroscopical sputter depth profiling

TL;DR: In this paper, a new Auger electron spectroscopical sputter depth profiling method was developed to determine the interdiffusion coefficient for the initial stage of diffusion annealing of thin films.