Journal ArticleDOI
InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy
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TLDR
In this article, the quantum confined Stark effect has been studied in InGaAsP/InP rib waveguide structures grown by gas source molecular beam epitaxy and it was shown that efficient modulation at shorter wavelength cannot be obtained in structures with thinner ternary wells.Abstract:
The quantum confined Stark effect has been studied in InGaAsP/InP rib waveguide structures grown by gas source molecular beam epitaxy. Using 100‐A‐wide wells of InGaAs, a room‐temperature exciton shift of about 250 A has been observed for a bias voltage of 6 V. At a wavelength of 1.64 μm a modulation depth of 35% has been achieved at a frequency of 500 MHz. We show that efficient modulation at shorter wavelength cannot be obtained in structures with thinner ternary wells. Instead, we propose and demonstrate InGaAsP modulators operating at a wavelength as short as 1.3 μm.read more
Citations
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Journal ArticleDOI
Linear and nonlinear optical properties of semiconductor quantum wells
TL;DR: In this paper, the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers, are reviewed.
Journal ArticleDOI
Molecular-beam epitaxy
TL;DR: These growth methods have been the major source of prototype multilayer, III-V semiconductor structures (heterostructures) for basic physics and device studies, and show increasing promise as production methods for such structures.
Journal ArticleDOI
Multiple quantum well (MQW) waveguide modulators
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Journal ArticleDOI
Quaternary quantum wells for electro‐optic intensity and phase modulation at 1.3 and 1.55 μm
TL;DR: In this paper, the authors demonstrate that large quantum-confined Stark effect can be obtained in high quality InGaAsP/InP quantum well p−i−n heterostructures.
Journal ArticleDOI
Optimization of quantum well materials and structures for excitonic electroabsorption effects
S. Nojima,K. Wakita +1 more
TL;DR: In this article, a method to enhance excitonic electroabsorption effects in semiconductor quantum well structures is presented, in which the well thickness and the band gap of the quantum well materials are optimized so that the figure of merit for electro absorption is maximized.
References
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Journal ArticleDOI
Electric field dependence of optical absorption near the band gap of quantum-well structures.
David A. B. Miller,Daniel S. Chemla,T. C. Damen,Arthur C. Gossard,W. Wiegmann,Thomas H. Wood,Charles A. Burrus +6 more
TL;DR: Detailed calculations of the shift of exciton peaks are presented including (i) exact solutions for single particles in infinite wells, (ii) tunneling resonance calculations for finite wells, and (iii) variational calculations ofexciton binding energy in a field.
Journal ArticleDOI
Variational calculations on a quantum well in an electric field
TL;DR: In this paper, the eigenstate of an isolated quantum well subject to an external electric field was analyzed and a quadratic Stark shift was found whose magnitude depended strongly on the finite well depth.
Journal ArticleDOI
High‐speed optical modulation with GaAs/GaAlAs quantum wells in a p‐i‐n diode structure
Thomas H. Wood,C. A. Burrus,David A. B. Miller,Daniel S. Chemla,Theodoor C. Damen,Arthur C. Gossard,W. Wiegmann +6 more
TL;DR: In this paper, a new type of high-speed optical modulator is proposed and demonstrated, where an electric field is applied perpendicular to GaAs/GaAlAs multiple quantum well layers using a diode doping structure of 4μm total thickness.
Journal ArticleDOI
Quantum‐confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy
TL;DR: In this article, the first observation of the quantum constrained Stark effect in InGaAs/InP multiple quantum wells grown by organometallic vapor phase epitaxy was reported, both in transmission and photoconductivity measurements.
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Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
TL;DR: The use of P2 and As2 beams generated from the cracking of PH3 and AsH3 as an alternative approach is reviewed and new data are presented in this article, where the flux composition as a function of epitaxial layer composition was determined for the lattice matching quaternary.