scispace - formally typeset
Journal ArticleDOI

Interpretation of Equilibrium and Steady-State Hall and Thermoelectric Effects in Inhomogeneous Materials

George H. Blount, +2 more
- 01 Apr 1970 - 
- Vol. 41, Iss: 5, pp 2190-2195
Reads0
Chats0
TLDR
In this article, the authors consider simple variations of a basic resistive network model for an inhomogeneous material and show that a wide variety of experimentally observed effects can be described with respect to equilibrium or steady-state Hall and thermoelectric measurements.
Abstract
Consideration of simple variations of a basic resistive‐network model for an inhomogeneous material shows that a wide variety of experimentally observed effects can be described with respect to equilibrium or steady‐state Hall and thermoelectric measurements. The correlation between these macroscopic Hall and thermoelectric measurements and the microscopic electrical and geometrical properties of the material is derived. A suitable combination of both Hall and thermoelectric measurements on the same sample makes it possible to determine the dominant average microscopic and geometric parameters of the system. Although developed under the stimulus of research into the photoconductivity mechanism in chemically deposited lead sulfide layers, the results of the consideration may have a wider application.

read more

Citations
More filters
Journal ArticleDOI

The Hall effect in polycrystalline and powdered semiconductors

TL;DR: In this article, a critical review of idealized two-phase geometrical models is given, which derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents.
Journal ArticleDOI

Zero‐bias resistance of grain boundaries in neutron‐transmutation‐doped polycrystalline silicon

TL;DR: In this article, the electrical transport properties of polycrystalline silicon have been characterized as a function of temperature on both bulk specimens and individual grain boundaries in this material and potential probe measurements show that a large spread in grain-boundary impedances exist in these higher-doped specimens.
Proceedings Article

Zero-bias resistance of grain boundaries in neutron transmutation doped polycrystalline silicon

TL;DR: In this article, the electrical transport properties of polycrystalline silicon have been characterized as a function of temperature on both bulk specimens and individual grain boundaries in this material and potential probe measurements show that a large spread in grain-boundary impedances exist in these higher-doped specimens.
Journal ArticleDOI

Preparation of sintered degenerate n-type PbTe with a small grain size and its thermoelectric properties

TL;DR: In this article, the Seebeck coefficient of sintered degenerate n-type PbTe samples with small grain sizes ranging from 07 to 4 μm was investigated and the effects of grain size on their thermoelectric properties were then investigated.
Journal ArticleDOI

The mechanism of photoconductivity in polycrystalline cadmium sulphide layers

TL;DR: In this paper, the mechanism of photoconductivity in polycrystalline CdS has been studied over the temperature range 100-300 K using Hall effect and conductivity measurements in the dark and under white light illumination.
References
More filters
Journal ArticleDOI

Photothermoelectric Effects in Semiconductors: n‐ and p‐Type Silicon

TL;DR: In this article, the ability of thermoelectric power measurements to permit a description of carrier density and phonon-drag variations caused by photoexcitation was tested in 100−Ω·cm n and p-type silicon.
Journal ArticleDOI

Investigation of the Photoconductive Effect in Lead Sulfide Films Using Hall and Resistivity Measurements

TL;DR: In this article, it was shown that the change in conductivity can be attributed completely to a change in carrier density, or whether current amplification occurs through modulation of barrier potentials.
Journal ArticleDOI

ERRATA: ``Interpretation of Hall and Photo‐Hall Effects in Inhomogeneous Materials''

TL;DR: In this paper, a simple model for an inhomogeneous material with only resistivity variations and without p−n junction barriers was proposed, and it was shown that a wide variety of effects can be obtained in such a model without barriers, depending only on the resistivity ratio between different portions of the material.