Journal ArticleDOI
Transport properties of polycrystalline silicon films
TLDR
In this article, the transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model, based on the assumption of both a δ-shaped and a uniform energy distribution of interface states.Abstract:
The transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain‐boundary trapping model. The theory has been developed on the assumption of both a δ‐shaped and a uniform energy distribution of interface states. A comparison with experiments indicates that the interface states are nearly monovalent and peaked at midgap. Their density is 3.8×1012 cm−2, in accordance with carrier‐lifetime measurements performed on CVD films.read more
Citations
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Journal ArticleDOI
An analytical model for the above-threshold characteristics of polysilicon thin-film transistors
TL;DR: In this article, an analytical model for the above-threshold characteristics of long-channel, small-grain and thin channel polysilicon thin film transistors (TFT's) is presented.
Journal ArticleDOI
High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors.
TL;DR: A comparison study of high-k Dielectric Materials for OFETs using self-Assembled Monoand Multilayers and Inorganic-Organic Bilayers to study the properties of polymeric-Nanoparticle Composites.
Journal ArticleDOI
Conductivity behavior in polycrystalline semiconductor thin film transistors
TL;DR: In this article, the effect of thermal annealing on implanted and unimplanted CdSe TFTs has been studied and the model appears to give a general description of the conductivity behavior in polycrystallin...
Journal ArticleDOI
The Hall effect in polycrystalline and powdered semiconductors
J W Orton,M J Powell +1 more
TL;DR: In this article, a critical review of idealized two-phase geometrical models is given, which derive expressions for the resistivity and Hall coefficient of a composite material in terms of the properties of its constituents.
Journal ArticleDOI
Grain boundaries in semiconductors
TL;DR: In this article, a review of the available experimental and theoretical understanding on the structure and electronic properties of grain boundaries in semiconducting materials is presented, where high-resolution electron microscope images of interfaces are interpreted within the framework of the structural unit model of grain boundary, and the electronic properties are discussed with relation to the popular symmetric Schottky barrier model for charge trapping and potential barrier formation.
References
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Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface
TL;DR: In this paper, the authors used galvanomagnetic experiments to determine the mobility and density of carriers in the space charge region of a semiconductor surface and derived the Hall coefficient and magneto-resistance by using the Boltzmann equation.
Journal ArticleDOI
Hall Mobility in Chemically Deposited Polycrystalline Silicon
TL;DR: In this article, the authors performed Hall mobility measurements on polycrystalline silicon films with and without doping impurities added during deposition or by diffusion from a doped vapordeposited oxide.
Journal ArticleDOI
Chemical Vapor Deposited Polycrystalline Silicon
M. E. Cowher,T. O. Sedgwick +1 more
Journal ArticleDOI
Recombination velocity effects on current diffusion and imref in schottky barriers
C.R. Crowell,M. Beguwala +1 more
TL;DR: In this paper, a detailed theoretical treatment is given of the effects of a thermionic velocity boundary condition on diffusion transport of majority carriers and the spatial variation of the majority carrier quasi-Fermi potential (imref) in metal-semiconductor (Schottky) diodes.