Journal ArticleDOI
Kinetics and modeling of sublimation growth of silicon carbide bulk crystal
TLDR
In this paper, a growth kinetics model is developed to study the mechanism of silicon carbide growth by physical vapor transport, which assumes that the growth rate is related to the supersaturation of a rate-determining reactant.About:
This article is published in Journal of Crystal Growth.The article was published on 2001-04-01. It has received 35 citations till now. The article focuses on the topics: Growth rate & Temperature gradient.read more
Citations
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Journal ArticleDOI
Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals
TL;DR: In this article, a comprehensive process model for SiC bulk growth has been developed that incorporates the calculations of radio frequency (RF) heating, heat and mass transfer and growth kinetics, and the effects of current in the induction coil as well as that of coil position on thermal field and growth rate have been studied in detail.
Journal ArticleDOI
Effects of induction heating on temperature distribution and growth rate in large-size SiC growth system
Qi-Sheng Chen,Pingqi Gao,W.R. Hu +2 more
TL;DR: In this article, the effects of induction heating on the temperature distribution and growth rate of large-size silicon carbide (SiC) growth system were investigated and it was found that the maximum temperature and growth temperature in the growth system increase with the frequency while keeping the same current in the induction coil.
Journal ArticleDOI
Fabrication of highly dense Al2O3 ceramics
TL;DR: In this paper, a novel method using a high-temperature physical vapor transport method for the preparation of highly dense Al2O3 ceramics was developed, and the results show that the microstructure of the dense Al 2O3 Ceramics showed directional distribution characteristics due to directional mass transfer.
Journal ArticleDOI
Heat transfer and kinetics of bulk growth of silicon carbide
Book ChapterDOI
Silicon Carbide Crystals — Part I: Growth and Characterization
TL;DR: In this paper, the authors reviewed the growth and characterization of Silicon Carbide (SiC) Crystals and characterized defects present in the SiC crystals using X-ray topography and microscopy-based techniques such as chemical etching, AFM, SEM, TEM, reflection and transmission optical microscopy.
References
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Journal ArticleDOI
Investigation of growth processes of ingots of silicon carbide single crystals
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the possibility of producing silicon carbide single-crystalline ingots from seeds in the 1800 to 2600°C range has been established, which is very promising at low temperatures.
Journal ArticleDOI
General principles of growing large-size single crystals of various silicon carbide polytypes
Yu. M. Tairov,V. F. Tsvetkov +1 more
TL;DR: In this article, the results of studies concerned with the processes of growing large silicon carbide single crystals of only one polytype were summarized, and the conditions of growing crystals of various polytypic structures were discussed.
Journal ArticleDOI
SiC seeded crystal growth
TL;DR: In this article, the authors show that there are several mechanisms or combinations of these mechanisms which cause micropipes in SiC boules grown by the seeded sublimation method.
Journal ArticleDOI
Growth of large SiC single crystals
D.L. Barrett,Mchugh James Paul,H.M. Hobgood,Richard H. Hopkins,P.G. McMullin,Rowland C. Clarke,Wolfgang J. Choyke +6 more
TL;DR: In this paper, the authors have grown 6H-polytype SiC single crystal boules up to 60 mm in diameter by the physical vapor transport process at 2300 o C.
Related Papers (5)
Investigation of growth processes of ingots of silicon carbide single crystals
Yu. M. Tairov,V. F. Tsvetkov +1 more