Patent
Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths
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TLDR
In this paper, a burst of ultrashort laser pulses is employed to sever a conductive link in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality.Abstract:
A burst of ultrashort laser pulses is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse within the burst is generally shorter than 25 ps, preferablyshorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst can be treated as a single 'pulse' by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst of laser pulses at each link (22). Conventional wavelengths or their harmonics can be employed.read more
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References
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Method of applying a laser beam creating micro-scale surface structures prior to deposition of film for increased adhesion
TL;DR: In this paper, a method of producing an improved adherent interface between a film or coating and a substrate of metal, ceramic, or composite material by laser treatment of the surface is presented.
Patent
Method of cutting interconnection pattern with laser and apparatus thereof
Takeoki Miyauchi,Mikio Hongo,Maruyama Shigenobu,Katsurou Mizukoshi,Hiroshi Yamaguchi,Koyo Morita +5 more
TL;DR: In this article, a laser beam having a pulse width of 10 -9 seconds or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redundant operation of a defective bit in, for example, a LSI memory, through a transmission type liquid crystal mask in the form of a desired pattern.
Patent
Process and apparatus for producing a functional structure of a semiconductor component
TL;DR: In this paper, it is suggested that all the layers be produced without lithography and applied to the base substrate one after the other exclusively with physical layer application processes, such that the functional structure of the semiconductor components can be produced as simply as possible and with as little susceptibility as possible with respect to the quality of the SINR components.
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Method for ablating metal workpieces with laser radiation
TL;DR: In this paper, a technique for ablating a metal workpiece by the use of laser beam radiation at an efficiency higher than heretofore possible and an improved regulation of the ablation process is presented.
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Discharge of lightning with ultrashort laser pulses.
TL;DR: In this paper, an arrangement for discharge of electricity or lightning in the atmosphere to prevent formation of space charges that would reduce the strength of electric fields therein by transmitting through a path in the atmospheric one or more first leaser pulses of wavelength essentially within the ultraviolet range and of duration sufficient to create an electrically conductive ionized channel was proposed.
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