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Layout decomposition for triple patterning lithography

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TLDR
It is shown that TPL layout decomposition is a more difficult problem than that for DPL, and a novel vector programming formulation is proposed which can simultaneously minimize conflict and stitch numbers and solve it through effective semidefinite programming (SDP) approximation.
Abstract
As minimum feature size and pitch spacing further decrease, triple patterning lithography (TPL) is a possible 193nm extension along the paradigm of double patterning lithography (DPL). However, there is very little study on TPL layout decomposition. In this paper, we show that TPL layout decomposition is a more difficult problem than that for DPL. We then propose a general integer linear programming formulation for TPL layout decomposition which can simultaneously minimize conflict and stitch numbers. Since ILP has very poor scalability, we propose three acceleration techniques without sacrificing solution quality: independent component computation, layout graph simplification, and bridge computation. For very dense layouts, even with these speedup techniques, ILP formulation may still be too slow. Therefore, we propose a novel vector programming formulation for TPL decomposition, and solve it through effective semidefinite programming (SDP) approximation. Experimental results show that the ILP with acceleration techniques can reduce 82% runtime compared to the baseline ILP. Using SDP based algorithm, the runtime can be further reduced by 42% with some tradeoff in the stitch number (reduced by 7%) and the conflict (9% more). However, for very dense layouts, SDP based algorithm can achieve 140× speed-up even compared with accelerated ILP.

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Journal ArticleDOI

Layout Decomposition Approaches for Double Patterning Lithography

TL;DR: Experimental results show that the proposed layout decomposition approaches effectively decompose given layouts to satisfy the key goals of minimized line-ends and maximized overlap margin.
Journal ArticleDOI

Design for Manufacturing With Emerging Nanolithography

TL;DR: This paper surveys key design for manufacturing issues for extreme scaling with emerging nanolithography technologies, including double/multiple patterning lithography, extreme ultraviolet lithographic, and electron-beam lithography.
Proceedings ArticleDOI

An efficient layout decomposition approach for triple patterning lithography

TL;DR: This paper proposes an efficient layout decomposition approach for TPL, with the objective to minimize the number of conflicts and stitches, and finds that the whole layout can be reduced into several types of small feature clusters.
Proceedings ArticleDOI

Double patterning layout decomposition for simultaneous conflict and stitch minimization

TL;DR: This paper proposes a simultaneous conflict and stitch minimization algorithm with an integer linear programming (ILP) formulation that can reduce 33% of stitches and remove conflicts by 87.6% compared with two phase greedy decomposition.
Proceedings ArticleDOI

A novel layout decomposition algorithm for triple patterning lithography

TL;DR: A stitch-aware mask assignment algorithm, based on a heuristic that finds a mask assignment such that the conflicts among the features in the same mask are more likely to be resolved by inserting stitches, is proposed.
References
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