Patent
Light self-injecting semiconductor laser device
Kohroh Kobayashi,Roy Lang +1 more
TLDR
In this article, a semiconductor laser device in which a part of the laser output is reflected from an external reflector and injected into the laser element with a delay that is less than the relaxation oscillation period of laser pulse output is described.Abstract:
A semiconductor laser device in which a part of the laser output is reflected from an external reflector and injected into the laser element with a delay that is less than the relaxation oscillation period of the laser pulse output.read more
Citations
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Journal ArticleDOI
An external cavity diode laser sensor
TL;DR: In this paper, a simple optical sensor system consisting of a near-field external cavity coupled to a semiconductor laser was reported, where a change of phase in the light fed back into the laser cavity by the perturbed external mirror modulates the output of the laser by effectively changing the laser facet reflectivity.
Patent
Semiconductor laser device.
TL;DR: In this article, a base, a semiconductor laser and a resin layer enclosing the semiconductor chip are used to construct a single synthetic resin having a thickness not greater than 500µm and also having a surface substantially parallel to an outwardly oriented beam emitting end face of the SLL.
Patent
Passively-locked external optical cavity
David A King,Richard J. Pittaro +1 more
TL;DR: In this article, a laser system capable of providing light of high intensity is disclosed, which includes a laser gain medium and three reflectors, including a first and a second reflector spaced from the first reflector, and a third reflector having a reflectivity larger than the reflectivity of the first and second reflectors.
Patent
Wavelength tunable laser
TL;DR: In this paper, a wavelength tunable laser (100a) comprising a laser diode (110) and one or more optical resonators (122) coupled to adjacent waveguides (124, 126) is described.
Patent
Tunable wavelength laser light source apparatus using a compound cavity such as a compound cavity semiconductor laser
TL;DR: In this article, the first optical reflection member (1) has a light wavelength selectivity, and at least one of the first to third optical reflection members (1, 2, 3) can change its position on an optical axis in relation to other reflection members.
References
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Journal ArticleDOI
Problem of Spike Elimination in Lasers
TL;DR: In this paper, the conditions under which spiking in the laser output can be completely suppressed were investigated theoretically and experimentally with a single-mode traveling-wave laser, and it was found that the time delay between the build-up of the electromagnetic energy in the cavity and the corrective action of the Kerr cell is a rather important parameter.
Journal ArticleDOI
Frequency stabilization and narrowing of optical pulses from CW GaAs injection lasers
TL;DR: In this article, self-induced intensity pulsations of continuously operating GaAs injection lasers have been frequency stabilized and narrowed by applying to the laser microwave feedback signals derived from the electrical and optical outputs of the laser itself.
Patent
Gallium arsenide laser fiber coupling
TL;DR: In this paper, the coupling of an injection laser diode into an optical fiber is improved by a short resonating length of fiber, where a partially reflective layer is positioned at the remote end of the resonator section and a highly reflective layer with an aperture slit and anti-reflection layer in the slit are disposed at the laser end.
Journal ArticleDOI
Single longitudinal mode operation of cw junction lasers by frequency-selective optical feedback
Thomas L. Paoli,José E. Ripper +1 more
TL;DR: In this article, the frequency-selective feedback, obtained by optically coupling a diffraction grating to the diode, is used to select a single mode of the normally multimode spectrum generated by the dioder itself.
Patent
Mode-locking in semiconductor lasers
T. Paoli,José E. Ripper +1 more
TL;DR: In this article, a Gires-Tournois interferometer, a pair of spaced, parallel diffraction gratings or an acoustic diffraction grating is used to achieve longitudinal mode-locking in a semiconductor laser.