Proceedings ArticleDOI
Low distortion high power GaAs pseudomorphic heterojunction FETs for L/S-band digital cellular base stations
I. Takenaka,K. Ishikura,H. Takahashi,K. Asano,M. Kanamori +4 more
- Vol. 3, pp 1711-1714
TLDR
In this article, an L/S-band high-power and low-distortion GaAs FET amplifier was developed, which employed newly developed GaAs pseudomorphic heterojunction FETs exhibiting large drain current and small gm3 characteristics.Abstract:
An L/S-band high-power and low-distortion GaAs FET amplifier has been developed. The amplifier employed newly developed GaAs pseudomorphic heterojunction FETs (HJFETs) exhibiting large drain current and small gm3 characteristics. In addition, the output matching circuit was designed to be in short condition for the second harmonic impedance to give the low distortion characteristics. The developed push-pull amplifier demonstrated 51.5 dBm (140 W) output-power with 13 dB linear gain at 2.2 GHz and extremely low IM3 performance of less than -40 dBc at two-tone total output-power of 43 dBm (at Vds=12 V, set Ids=4% Imax). The developed amplifier is suitable for digital cellular base station system applications.read more
Citations
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Improving the Linearity and Efficiency of RF Power Amplifiers
TL;DR: In this article, an overview of the work that has been achieved to date to maximize linearity and efficiency in the most promising technologies, as related specifically to infrastructure applications, is presented.
Proceedings ArticleDOI
A high power density 26 V GaAs pHEMT technology
B.M. Green,Ellen Lan,P. Li,O. Hartin,C.A. Gaw,M. CdeBaca,E.M. Johnson,Lawrence S. Klingbeil,P. Fisher,J. Kim,D. Maurer,B. Knappenberger,M. Miller,Charles E. Weitzel +13 more
TL;DR: In this paper, the authors presented a GaAs pHEMT technology optimized for 26 V drain bias for 2.14 GHz gate width scaling, which achieved output power densities of 1.8-2.1 W/mm of output power at 1 dB gain compression (P/sub 1dB/) for device sizes ranging from 14.4 mm down to 3.6 mm.
Proceedings ArticleDOI
A 240 W power heterojunction FET with high efficiency for W-CDMA base stations
I. Takenaka,K. Ishikura,K. Takahashi,K. Kishi,Y. Ogasawara,K. Hasegawa,H. Takahashi,F. Emori,Naotaka Iwata +8 more
TL;DR: An L/S-band highly efficient 240 W GaAs FET amplifier has been developed in this paper, which employed newly developed pseudomorphic heterojunction FETs exhibiting large drain current and high gm characteristics.
Proceedings ArticleDOI
A 28V over 300 W GaAs heterojunction FET with dual field-modulating-plates for W-CDMA base stations
TL;DR: In this article, the authors presented an L/S-band over 300 W GaAs heterojunction FETs (HJFETs) amplifier for 28V operation, in which one of the FP electrodes is connected to the gate and the other to the ground.
Proceedings ArticleDOI
A novel high voltage RF vertical MOSFET for high power applications
TL;DR: In this article, an RF vertical MOSFET (VDMOS) is discussed and the results show a new vertical RF transistor that achieves excellent RF performance for high power applications utilizing a high breakdown capability.
References
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Journal ArticleDOI
Intermodulation Distortion Analysis of MESFET Amplifiers Using the Volterra Series Representation
TL;DR: In this paper, the third-order intermodulation distortion generated in a MESFET amplifer is analyzed by means of the Volterra series representation, which enables direct analytical determination of the nonlinear elements from small-signal measurements.
Proceedings ArticleDOI
A 150 W E-mode GaAs power FET with 35% PAE for W-CDMA base station
TL;DR: In this paper, a 150 W power FET for WCDMA base stations was developed, which combines four enhancement-mode (E-mode) 40 W FET chips newly developed and implemented in a package in a push-pull configuration.