Journal ArticleDOI
Low loss GaInNAs/GaAs gain waveguides with U-bend geometry for single-facet coupling in hybrid photonic integration
TLDR
In this paper, a low-loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration is presented, where the input and output ports of the gain waveguide are placed on the same facet and thus alleviates the geometrical constrains in hybrid integration.Abstract:
We report a low loss U-bend waveguide for realization of GaAs-based gain elements employed in hybrid photonic integration. This architecture allows us to position the input and output ports of the gain waveguide on the same facet and thus alleviates the geometrical constrains in hybrid integration, i.e., the need for precise alignment with silicon photonic waveguides on both ends of the III–V chip. As an exemplary demonstration, we report the loss and gain characteristics of GaInNAs/GaAs U-bend waveguides operating at 1.3 μm. In particular, we demonstrate a bending loss as low as 1.1 dB for an 83 μm bending radius. Efficient laser diode operation is also demonstrated.read more
Citations
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Journal ArticleDOI
Design of Si-rich nitride interposer waveguides for efficient light coupling from InP-based QD-emitters to Si3N4 waveguides on a silicon substrate.
Dimitrios Chatzitheocharis,Dimitra Ketzaki,Cosimo Calo,Christophe Caillaud,Konstantinos Vyrsokinos +4 more
TL;DR: A systematic analysis for the design of Si-rich-nitride (SRN) based interposer waveguide layers interfacing InP-based devices and Si3N4 waveguides, towards monolithic co-integration of active and passive elements through a Back-End-Of-Line process.
Journal ArticleDOI
High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range
TL;DR: In this article, a high-power superluminescent diode emitting over 400 mW in the 1.2 μm range is reported, which is based on a single GaInNAs/GaAs quantum well positioned within a low-confinement vertical waveguide and a lateral ridge waveguide geometry, ensuring single transverse mode operation.
Proceedings ArticleDOI
Amorphous silicon waveguide escalator: monolithic integration of active components on 3-um SOI platform
Abstract: VTT’s 3 μm SOI platform with record low propagation loss (0.1 dB/cm for fundamental mode), as well as polarization insensitivity, offers a rich portfolio of efficient passive and active components. With a view to extend the component toolbox by monolithically integrating high-speed plasmonic modulators, we have developed an a-Si:H based waveguide escalator to take out light from highly confined thick-SOI passives to the top layer where active materials are monolithically integrated. Using the compact escalator, monolithic integration of various high-speed active components on the 3 μm SOI platform are proposed.
Journal ArticleDOI
Precise length definition of active GaAs-based optoelectronic devices for low-loss silicon photonics integration.
Heidi Tuorila,Jukka Viheriälä,Nouman Zia,Matteo Cherchi,Mikko Harjanne,Riku Isoaho,Timo Aalto,Mircea Guina +7 more
TL;DR: A new, to the best of the knowledge, approach for precise definition of the III-V chip length is reported, which significantly improves the integration yield owing to the increased length uniformity.
Proceedings ArticleDOI
1.3 µm U-bend traveling wave SOA devices for high efficiency coupling to silicon photonics
TL;DR: In this paper, a U-bend design for traveling wave III-V gain devices, such as semiconductor optical amplifiers and laser diodes, is presented, which greatly simplifies the butt-coupling between the IIIV chip and silicon-on-insulator photonic circuit by bringing the I/O ports on one facet.
References
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On-chip light sources for silicon photonics
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Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform
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New silicon photonics integration platform enabled by novel micron-scale bends
TL;DR: In this article, the authors showed that single-mode rib waveguides with a micron-scale silicon core can be locally transformed into multi-mode strip waveguiders that have very high lateral index contrast.
Journal ArticleDOI
The use of Cornu spirals in drawing planar curves of controlled curvature
Dereck S. Meek,D. J. Walton +1 more
TL;DR: In this article, it is shown that it is possible to find Cornu spirals with a micro-computer and that the radii of the circles used will limit and control the curvature of the whole design curve.
Journal ArticleDOI
Low-loss converters between optical silicon waveguides of different sizes and types
TL;DR: In this article, two types of low-loss converters between different optical waveguides on silicon-on-insulator are demonstrated, and the fabrication of both structures is based on a simple two-step etch process with a relaxed mask alignment tolerance and no need for epitaxy.