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Low Power and High Reliable Triple Modular Redundancy Latch for Single and Multi-node Upset Mitigation

TLDR
In FRTMR latch, a novel majority voter circuit is proposed with a minimum number of sensitive nodes and is highly immune to single and multi-node upsets, demonstrating that the proposed latch achieves high low power and low area results.
Abstract
CMOS based circuits are more susceptible to the radiation environment as the critical charge (Qcrit) decreases with technology scaling. A single ionizing radiation particle is more likely to upset the sensitive nodes of the circuit and causes Single Event Upset (SEU). Subsequently, hardening latches to transient faults at control inputs due to either single or multi-nodes is progressively important. This paper proposes a Fully Robust Triple Modular Redundancy (FRTMR) latch. In FRTMR latch, a novel majority voter circuit is proposed with a minimum number of sensitive nodes. It is highly immune to single and multi-node upsets. The proposed latch is implemented using CMOS 45 nm process and is simulated in cadence spectre environment. Results demonstrate that the proposed latch achieves 17.83 % low power and 13.88 % low area compared to existing Triple Modular Redundant (TMR) latch. The current induced due to transient fault occurrence at various sensitive nodes are exhibited with a double exponential current source for circuit simulation with a minimum threshold current value of 40 µA.

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References
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Journal ArticleDOI

Soft errors in advanced computer systems

TL;DR: This article comprehensively analyzes soft-error sensitivity in modern systems and shows it to be application dependent.
Journal ArticleDOI

Single Event Transients in Digital CMOS—A Review

TL;DR: A review of digital single event transient research can be found in this paper, including a brief historical overview of the emergence of SET phenomena, a review of the present understanding of SET mechanisms, a state-of-the-art in SET testing and modelling, and a discussion of the impact of technology scaling trends on future SET significance.
Journal ArticleDOI

Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

TL;DR: A simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations, and the results illustrate why a conventional model based on one double-exponential source can be incomplete.
Journal ArticleDOI

Design and Performance Evaluation of Radiation Hardened Latches for Nanoscale CMOS

TL;DR: Three new hardened designs for CMOS latches at 32 nm feature size are proposed; these circuits are Schmitt trigger based, while the third one utilizes a cascode configuration in the feedback loop.
Journal ArticleDOI

A High Performance SEU Tolerant Latch

TL;DR: The simulation results show that the proposed latch achieves a better tradeoff among soft error rate, delay, power and area than previous hardened latches, making it an excellent solution for applications requiring both high performance and high reliability.
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