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Journal ArticleDOI

Magnetic domain structures in multilayered NiFe films

S. R. Herd, +1 more
- 01 Mar 1979 - 
- Vol. 50, pp 2384-2386
TLDR
In this article, the coercivity of NiFe (80/20) films can be reduced by laminating several layers with nonmagnetic spacers, provided the spacer thickness is below a critical value.
Abstract
The coercivity of NiFe (80/20) films can be lowered by laminating several layers with nonmagnetic spacers. A reduction by a factor of 10 can be achieved with a simple bi‐layer, regardless of spacer material, provided the spacer thickness is below a critical value. No further reduction is found for multilayers. Two peaks of Hc near thicknesses of 250A and 1000A for single layer films, associated with changes in domain structure, are suppressed by lamination. After a minimum spacer thickness (S) of 10–15A, the domain walls in the separate layers no longer coincide but track closely, their separation depending on S. With S?100A the layers switch independently, giving rise to multiple values of Hc.

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Citations
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Journal ArticleDOI

Magnetic properties of multilayered Fe‐Si films

TL;DR: In this article, the coercivity and permeability of FeSi films can be improved by laminating several layers with either nonmagnetic (SiO2, Al2O3, Al or Mo) or ferromagnetic (Ni, Fe, Co or 20% Fe-Ni) spacers.
Journal ArticleDOI

Magnetic and structural characterization of sputtered FeN multilayer films

TL;DR: The magnetic and structural properties of ferromagnetic FeN thin films, FeN/FeN (ferromagnetic/paramagnetic), and FeN /SiO2 multilayers deposited in a rotational dc magnetron sputter system were investigated in this paper.
Journal ArticleDOI

Nanostructure and chemical inhomogeneity in TbFe magneto-optical films

TL;DR: In this article, high spatial resolution chemical imaging results provided the first direct experimental evidence illustrating nanosegregation in thin films of sputtered Tb-Fe alloys, and the observed chemical segregation appeared to result from the initial nucleation and growth of stable Fe-rich amorphous phase.
Journal ArticleDOI

A magnetostatic-coupling based remote query sensor for environmental monitoring

TL;DR: A new type of in situ, remotely monitored magnetism-based sensor is presented that is comprised of an array of magnetically soft, magnetostatically-coupled ferromagnetic thin-film elements or particles combined with a chemically responsive material that swells or shrinks in response to the analyte of interest.
Journal ArticleDOI

Wall clusters and domain structure conversions

TL;DR: The significance of wall clusters, which is a new concept in the theory of soft magnetic materials, is experimentally demonstrated in thin Permalloy configurations and improves the insight into the complex process of domain structure transformations.
References
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Book

Electron Microscopy of Thin Crystals

TL;DR: Hirsch et al. as mentioned in this paper described further experiments on the preparation of thin film sections of embedded Backscatter Kikuchi diffraction in the SEM for identification of crystallographic thin films by electron microscopy.
Journal ArticleDOI

Very Low Coercive Force in Nickel–iron Films

H. Clow
- 16 Jun 1962 - 
Journal ArticleDOI

Domain‐Wall Structures in Magnetic Double Films

TL;DR: In this article, the energy and the width of double-layer SiO double-films are calculated and compared with experimental Bitter observations of the walls, and domain structures and the reduction of the wall motion coercive force are discussed.
Journal ArticleDOI

Fast Flux Reversal in Laminated Nickel-Iron Thin Films

TL;DR: In this article, the magnetization curves of 80-20 nickel-iron films with silicon monoxide were characterized by very low coercive forces, with an anisotropy field of 3.4 × 10−5 mm mercury.
Proceedings ArticleDOI

Effects of interfacial mixing on the properties of RF sputtered NiFe films

TL;DR: In this article, the authors measured the composition profile in Au/NiFe and NiFe/SiO2 films and found that interfacial mixing was present as a result of biased sputtering and its extent was affected by bias voltage and substrate materials.