Manufacture of semiconductor device

TLDR: In this paper, the surface of a semiconductor substrate consisting of some one of laminated wafers is shaved off so as to leave a necessary thickness at the bonding part of the substrate with an intrinsic base and a single crystal is buried in a hole formed by anisotropic etching.

Abstract: PURPOSE:To lessen the number of processes by a method wherein the surface of a semiconductor substrate consisting of some one of laminated wafers is shaved off so as to leave a necessary thickness at the bonding part of the substrate with an intrinsic base and a single crystal is buried in a hole formed by anisotropic etching. CONSTITUTION:A P-type single crystal substrate 3 is prepared, oxide layers 2 and 4 are arranged so as to come into contact with each other and an electrostatic contact bonding is performed. Then, a hole, which passes through the layers 2 and 4 and reaches the P-type Si substrate 3, is opened by anisotropic etching and this hole is filled with a single crystal Si film 5 by an epitaxial growth. The silicon film 5 deposited on a place other than this hole is removed. An emitter window is opened in an oxide layer 11 by anisotropic etching. An oxide layer 21 is etched to form an emitter diffusion window. A polycrystalline silicon film 22 is deposited in the vicinity of this window, an annealing is performed to form a P-N-P transistor and an N-type emitter diffused region 9, a P-type diffused region 10 and a collector contact compensation diffused region 8 are simultaneously formed. Thereby, a bipolar transistor structure can be manufactured in a process of the number of few processes.