Journal ArticleDOI
Mechanics of microelectronics structures as revealed by X-ray diffraction
TLDR
In this paper, a real-space mapping of strain distributions in pseudomorphically strained, raised SiGe structures revealed that elastic relaxation extends approximately 20 times the feature thickness from their edges.Abstract:
The presence of strain distributions within semiconductor features influences many aspects of their behavior. For example, microelectronic technology that incorporates strained silicon improves device performance by increasing carrier mobility in the Si channels. Because current semiconductor fabrication contains multiple levels of metallic and dielectric structures, an understanding of the mechanical response of the constituent elements is critical to the prediction of the overall device performance. In addition, the interaction of strain fields between adjacent structures becomes greater as feature sizes decrease and the corresponding feature density increases. The use of synchrotron-based X-ray methods allows one to determine the interaction between strained features and their environment at a submicron resolution. Real-space mapping of strain distributions in pseudomorphically strained, raised SiGe structures revealed that elastic relaxation extends approximately 20 times the feature thickness from their edges. X-ray topographic methods were also applied to map the substrate deformation induced by overlying SiGe features. A formulation based on the classical Ewald-von Laue theory of dynamical diffraction was derived to match the measured diffraction profiles.read more
Citations
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Accuracy, Precision, and Resolution in Strain Measurements on Diffraction Instruments
TL;DR: In this article, the accuracy, precision, and resolution in Strain Measurements on Diffraction Instruments are evaluated using the Diffraction Measurement Accuracy, Precision, and Resolution (DPR) metric.
Proceedings ArticleDOI
Moisture diffusivity analysis of polycarbonate for LED lens
TL;DR: In this paper, the diffusivity measurement of polycarbonate (PC) was conducted Simulation and analytical close-form solution (CFS) were also used to predict the moisture absorption process.
References
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Book
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TL;DR: Webb's work on elasticity as mentioned in this paper is the outcome of a suggestion made to me some years ago by Mr R. R. Webb that I should assist him in the preparation of a work on Elasticity.
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Piezoresistance Effect in Germanium and Silicon
TL;DR: In this article, the complete tensor piezoresistance has been determined experimentally for these materials and expressed in terms of the pressure coefficient of resistivity and two simple shear coefficients.
Journal ArticleDOI
Calculated elastic constants for stress problems associated with semiconductor devices
TL;DR: In this paper, a generalized expression for ν has been derived for arbitrary orientations of cubic semiconductor crystals, and the variation of E, ν, and E/(1−ν) for directions within the important {111, {100, and {110} planes is examined.
Book
High Resolution X-Ray Diffractometry and Topography
David Bowen,Brian K. Tanner +1 more
TL;DR: In this paper, the authors explore the area of x-ray diffraction and the techniques available for deployment in research, development, and production, and provide theoretical and practical background for applying these techniques in scientific and industrial materials characterization.
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