Journal ArticleDOI
Mercury chalcogenides, zero gap semiconductors†☆
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In this paper, the alloys of HgTe 1−x Se x were prepared with x = 0 to 1 in steps of 0.2 using the modified Bridgman technique.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1975-11-01. It has received 9 citations till now.read more
Citations
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Journal ArticleDOI
Low temperature synthesis of binary chalcogenides
N. Yellin,L. Ben-Dor +1 more
TL;DR: In this article, the synthesis of tellurides and selenides of Hg, Cd, Zn, Ge, Sn and Pb at temperatures considerably below the melting point of the compounds was studied.
Journal ArticleDOI
HgSe, a highly electronegative stable metallic contact for semiconductor devices
TL;DR: Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n−ZnSe have been characterized by capacitancevoltage and photoresponse measurements.
Journal ArticleDOI
Effect of pressure and anionic substitution on the electrical properties of HgTeS crystals
TL;DR: In this article, the authors investigated the Hall constant R and resistivity ρ for the HgTe1−xSx (0.04≤x≤0.6) crystals in the temperature range 4.2-350 K in the magnetic fields B up to 14 T. The authors showed that the transition to the wide-gap semiconductor phase is observed at P>1-1.5 GPa.
Book ChapterDOI
Chalcogens and Metal Chalcogenides
TL;DR: It is common that the three heaviest elements of the sulfur sub-group, namely selenium, tellurium, and polonium, be collectively referred to as the "chalcogens".
Journal ArticleDOI
Electrical Characterization of Pressure Induced Phase Transitions in Mercury Chalcogenides
B. A. Lombos,H. M. Mahdaly +1 more
TL;DR: In this paper, a polynucleation model was developed and the critical sizes of the nuclei are suggested to be related to the "region of indifference" defined by Bridgman.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
Journal ArticleDOI
Electron scattering in InSb
TL;DR: In this article, the effects of electron scattering by acoustical and optical phonons as well as electron-hole scattering on the mobility and thermoelectric power of intrinsic InSb were investigated.
Journal ArticleDOI
Band structure of gray tin
Steven Groves,William Paul +1 more
TL;DR: In this article, a new model for the band structure of n-Sn is proposed which is compatible with the experimental results reported on this material and particularly with the measurements of magnetoresistance and the pressure dependence of the conductivity (o) and Hall coefficient (R) which have been in relatively poor agreement with models previously suggested.