Journal ArticleDOI
Metal contact induced crystallization in films of amorphous silicon and germanium
TLDR
In this paper, the crystallization and compound formation temperature of vacuum deposited amorphous Si (and Ge) while in contact with various crystalline metals as a thin film sandwich are investigated by electron microscopy and electron diffraction.Abstract:
The crystallization and compound formation temperature of vacuum deposited amorphous Si (and Ge) while in contact with various crystalline metals as a thin film sandwich are investigated by electron microscopy and electron diffraction. The results show that in simple eutectic systems the Si crystallizes at 0.72 (and Ge at approximately 0.65) of the eutectic temperature expressed in degrees Kelvin. Compounds are formed generally by the more rapid diffusion of Si into the metal.read more
Citations
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Journal ArticleDOI
Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson,J.A. Roth +1 more
TL;DR: In this paper, the authors examined the crystallization behavior of a-Si over the temperature range from 500 °C to ∼ 1380°C and showed that the random crystallization process is a well-behaved function of temperature over that temperature range with an activation energy of 4 eV.
Journal ArticleDOI
Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
TL;DR: Amorphous layers, approximately 4000 A thick, were formed on single-crystal Si samples by implantation of 28Si ions at LN2 substrate temperature as mentioned in this paper, where channeling effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure subsequent epitaxial regrowth on the underlying crystalline substrates.
Journal ArticleDOI
Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films
C. Hayzelden,J. L. Batstone +1 more
TL;DR: In this paper, the nucleation and growth of isolated nickel disilicide precipitates in amorphous Si thin films and the subsequent low-temperature silicide-mediated crystallization of Si was studied using in situ transmission electron microscopy.
Journal ArticleDOI
Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
Oliver Nast,Stuart Wenham +1 more
TL;DR: Aluminum-induced crystallization of amorphous silicon is studied as a promising low-temperature alternative to solid-phase and laser crystallization in this article, where the overall process of the Al and Si layer exchange during annealing at temperatures below the eutectic temperature of 577 °C is investigated by various microscopy techniques.
Journal ArticleDOI
Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature
TL;DR: In this article, the achievement of high-quality continuous polycrystalline silicon (poly-Si) layers onto glass substrates by using aluminum-induced crystallization is reported, and the crystallization behavior of dc sputtered amorphous silicon on glass induced by an Al interface layer has been investigated above and below the eutectic temperature of 577 °C.
References
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Journal ArticleDOI
Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium Film
Journal ArticleDOI
The influence of contact materials on the conduction crystallization temperature and electrical properties of amorphous germanium, silicon and boron films
J.R. Bosnell,U.C. Voisey +1 more
TL;DR: In this article, the effect of various contact materials on the properties of amorphous germanium, silicon and boron films was investigated and it was found that noble metal contacts caused crystallization of the amorphized film; resistivity results using these contacts during anneal showed an irreversible increase in film resistivity.