Journal ArticleDOI
Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
TLDR
Amorphous layers, approximately 4000 A thick, were formed on single-crystal Si samples by implantation of 28Si ions at LN2 substrate temperature as mentioned in this paper, where channeling effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure subsequent epitaxial regrowth on the underlying crystalline substrates.Abstract:
Amorphous layers, approximately 4000 A thick, were formed on single‐crystal Si samples by implantation of 28Si ions at LN2 substrate temperature. Channeling‐effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure the subsequent epitaxial regrowth on the underlying crystalline substrates. For annealing temperatures between 450 and 575 °C, the growth rate showed a strong dependence on the substrate orientation with 〈100〉‐oriented samples exhibiting about a 25 times higher growth rate than 〈111〉‐oriented samples. Measurements of the growth rate on a series of samples cut in 5° angular increments show that there is a monotonic decrease from the 〈100〉 to the 〈111〉 orientation. A simple model is proposed to explain the observed orientation dependence.read more
Citations
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Journal ArticleDOI
Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson,J.A. Roth +1 more
TL;DR: In this paper, the authors examined the crystallization behavior of a-Si over the temperature range from 500 °C to ∼ 1380°C and showed that the random crystallization process is a well-behaved function of temperature over that temperature range with an activation energy of 4 eV.
Journal ArticleDOI
A systematic analysis of defects in ion-implanted silicon
TL;DR: In this paper, a classification scheme for implant-related damage which arise upon annealing consisting of five categories is presented, and the most common forms of this damage are microtwins, hairpin dislocations and segregation related defects.
Journal ArticleDOI
Crystal grain nucleation in amorphous silicon
TL;DR: In this paper, the morphological evolution of the amorphous towards the polycrystalline phase is investigated by transmission electron microscopy and it is interpreted in terms of a physical model containing few free parameters related to the thermodynamical properties of ammorphous silicon and to the kinetical mechanisms of crystal grain growth.
Journal ArticleDOI
Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
TL;DR: In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.
Journal ArticleDOI
Ion-beam-induced amorphization and recrystallization in silicon
TL;DR: In this paper, the most significant experimental observations related to ion-beam-induced amorphization in Si and the models that have been developed to describe the process are described and analyzed.
References
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Journal ArticleDOI
Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92,
J.F. Ziegler,W.K. Chu +1 more
TL;DR: In this paper, a table of semi-empirical values of stopping cross sections [expressed in eV/(atom/cm2)] for 4He ions in every element (1 ≤ Z ≤ 92) for ion energies from 400 to 4000 keV.
Journal ArticleDOI
Influence of 16O, 12C, 14N, and noble gases on the crystallization of amorphous Si layers
TL;DR: In this article, channeling effect measurements have been used to study the effect of impurities on the epitaxial regrowth of amorphous silicon layers on single-crystal silicon.
Journal ArticleDOI
Metal contact induced crystallization in films of amorphous silicon and germanium
TL;DR: In this paper, the crystallization and compound formation temperature of vacuum deposited amorphous Si (and Ge) while in contact with various crystalline metals as a thin film sandwich are investigated by electron microscopy and electron diffraction.
Journal ArticleDOI
Regrowth behavior of ion-implanted amorphous layers on silicon
TL;DR: In this paper, the regrowth of Si crystal from amorphous layers created by Si implantation into 〈111〉, ¼ 100 ¼ and ¼ 110 ¼ Si was studied.