Patent
Method for correcting residual defect of phase shift mask and device therefor
Yasaka Kojin,Fujii Toshiaki +1 more
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TLDR
In this article, the sputtering effect of a focused ion beam was used to correct the residual defects of the phase shifters of a phase shift mask by utilizing a sputtering mechanism.Abstract:
PURPOSE:To correct the residual defects of the phase shifters of a phase shift mask. CONSTITUTION:The device for correcting the mask by utilizing a sputtering effect of a focused ion beam is provided with plural secondary charge particle detectors 8 in order to correct the residual defects of the phase shifters of the phase shift mask. The three-dimensional shapes of the residual defects of the phase shifters are recognized by the outputs of the plural secondary charge particle detectors 8 and a map of ion irradiation quantities meeting the three-dimensional shapes of the defects is formed. Etching is executed in accordance with this map. Then, the surface of the mask after removal of the residual defects is smoothed and this mask is usable as the phase shift mask.read more
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Patent
Photolithography mask repair
TL;DR: In this paper, the authors used a charged particle beam to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angles, and then used this information to reconstruct the original mask.
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Charged particle beam writing apparatus and method therefor
Hidesuke Yoshitake,秀介 吉武 +1 more
TL;DR: In this article, the authors propose a charged particle beam writing apparatus with a memory to store ID-related defect position information, defect size information, and pattern data for writing, and an examination unit to examine whether a pattern layout is formed such that the defect is located in a region where the absorber film remains after patterning, and a writing unit 150 to write a pattern on the substrate using an electron beam.
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Apparatus and method for drawing with charged particle beam
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