Patent
Method for etching chromium thin film and method for producing photomask
TLDR
In this article, a chromium-based thin film made of a material containing chromium is etched using a resist pattern as a mask, and the thin film is etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen containing gas and an oxygen-containing gas.Abstract:
An object to be processed has a chromium-based thin film made of a material containing chromium. The thin film is etched using a resist pattern as a mask. The thin film is etched by the use of a chemical species produced by preparing a dry etching gas containing a halogen-containing gas and an oxygen-containing gas and supplying a plasma excitation power to the dry etching gas to thereby excite plasma. The thin film is etched using, as the plasma excitation power, a power lower than a plasma excitation power at which plasma density jump occurs.read more
Citations
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Patent
Semiconductor processing system and methods using capacitively coupled plasma
Jang-Gyoo Yang,Matthew L. Miller,Xinglong Chen,Kien N. Chuc,Qiwei Liang,Shankar Venkataraman,Dmitry Lubomirsky +6 more
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Patent
Semiconductor processing systems having multiple plasma configurations
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Patent
Methods for etch of metal and metal-oxide films
TL;DR: In this paper, a method of selectively etching a metal-containing film from a substrate comprising a metal containing layer and a silicon oxide layer is proposed, which involves flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorinecontaining gas to generate a plasma in the plasma generation area.
Patent
Methods for etch of sin films
TL;DR: In this paper, a method of selectively etching silicon nitride from a substrate comprising a silicon oxide layer and a silicon dioxide layer is proposed. But the method requires the substrate to be exposed to the reactive gas in the gas reaction region of the substrate processing chamber.
Patent
Processing systems and methods for halide scavenging
Anchuan Wang,Xinglong Chen,Zihui Li,Hiroshi Hamana,Zhijun Chen,Ching-Mei Hsu,Jiayin Huang,Nitin K. Ingle,Dmitry Lubomirsky,Shankar Venkataraman,Randhir Thakur +10 more
TL;DR: In this article, a system, chambers, and processes are provided for controlling process defects caused by moisture contamination in a vacuum or controlled environment, and the chambers may include configurations to provide additional processing capabilities in combination chamber designs.
References
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Patent
Optically characterizing polymers
TL;DR: In this article, a system for optically characterizing polymers is described, and the system is used to perform linear analysis of the polymers, and it is shown that linear analysis can be used to determine the properties of polymers.
Patent
Process for dry lithographic etching
TL;DR: Patterning of a layer of material that can be etched with a gaseous mixture of oxygen, chlorine, and nitrogen as etchant species, such as a chromium or an ammonium-containing compound layer, is accomplished by using a patterned organometallic resist, which contains silicon or germanium as mentioned in this paper.
Patent
Metallic nano-optic lenses and beam shaping devices
TL;DR: A nano-optic device comprises a plurality of subwavelength apertures in a metal film or between metal islands as discussed by the authors, adapted to shape a radiation beam transmitted there through.
Patent
Selective plasma vapor etching process
TL;DR: In this article, a gas plasma is created within the chamber to produce active species of atoms and molecules so that these species come into contact with the surface of the body to chemically react at least one of the materials with active species from the gas plasma to form a gas-non-gaseous chemical reaction.
Patent
Manufacture of semiconductor device
TL;DR: In this article, a demagnifying projection exposure device was used to improve the accuracy of the semiconductor pattern overlay by using the laser in demagnification projection exposure devices without performing alkali chemical treatment.