Patent
Method for recrystallizing a polycrystalline, amorphous or small grain material
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TLDR
In this paper, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart.Abstract:
For recrystallizing a layer of polysilicon extending over a layer of silicon dioxide on a substrate of silicon single crystal, the silicon dioxide layer is interrupted at seeding locations which are spaced apart in at least one direction and at which the polysilicon layer comes into contact with the substrate, an electron beam of generally strip-shaped cross section is impacted on the polysilicon layer where the beam is focused into a fine impact line of intense energy extending transverse to the one direction in which the seeding locations are spaced apart, the substrate and electron beam are relatively displaced in a direction transverse to the impact line so that the impact line of the beam relatively scans at least a portion of the polysilicon layer transversely to the direction in which the seeding locations are spaced apart, and the speed with which the impact line relatively scans the polysilicon layer is determined so that the polysilicon layer is subjected to zone melting at the impact line of the electron beam for growing silicon single crystals by lateral epitaxial recrystallization of the polysilicon from the seeding locations.read more
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References
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Patent
Method of crystallizing amorphous material with a moving energy beam
John C. C. Fan,Herbert J. Zeiger +1 more
TL;DR: In this paper, an improved method for crystallizing amorphous material with a moving beam of energy is disclosed, in which the energy beam is scanned in a manner to provide controlled, continuous motion of the crystallization front.
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Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
TL;DR: In this paper, a method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed none-pitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystallization from a single nucleation site and for suppressing the formation of competitive nucleation sites at their edges.
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Lateral epitaxial growth by seeded solidification.
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