Patent
Method of fabricating semiconductor device with capacitor
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TLDR
In this paper, a fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor.Abstract:
A fabrication method of a semiconductor device with a capacitor is provided, which prevents leakage current from increasing and dielectric breakdown resistance from decreasing during a CVD or dry etching process for forming an insulating film to cover the capacitor. In this method, a lower electrode of a capacitor is formed on a first insulating film. The first insulating film is typically formed on or over a semiconductor substrate. A dielectric film of the capacitor is formed on the lower electrode to be overlapped therewith. An upper electrode of the capacitor is formed on the dielectric film to be overlapped therewith. A second insulating film is formed to cover the capacitor by a thermal CVD process in an atmosphere containing no plasma at a substrate temperature in which hydrogen is prevented from being activated due to heat. A source material of the second insulating film has a property that no hydrogen is generated in the atmosphere through decomposition of the source material during the thermal CVD process.read more
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References
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Process for fabricating transistors using composite nitride structure
TL;DR: In this paper, a source/drain electrode of an integrated circuit transistor and a contact window for it is fabricated, and a structure with a window over the source/drain region next to a gate electrode and isolation structure is established.
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TL;DR: In this paper, a high-permittivity multicomponent oxide film and refractory metal or metal compound, having a high selectivity relative to a mask can be processed by etching the multi-component oxide film using, as an etching gas, an organic gas which produces a volatile organic metal.
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