S
Seung-Eon Ahn
Researcher at Samsung
Publications - 115
Citations - 6151
Seung-Eon Ahn is an academic researcher from Samsung. The author has contributed to research in topics: Non-volatile memory & Layer (electronics). The author has an hindex of 35, co-authored 109 publications receiving 5854 citations. Previous affiliations of Seung-Eon Ahn include Korea University & Ewha Womans University.
Papers
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Journal ArticleDOI
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim,Sunae Seo,Seung-Eon Ahn,Dongseok Suh,Myoung-Jae Lee,B.-H. Park,I. K. Yoo,I. G. Baek,Hyeok Kim,E. K. Yim,J. E. Lee,Park Soon,Hyun-Suk Kim,U-In Chung,J. T. Moon,B. I. Ryu +15 more
TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.
Journal ArticleDOI
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Myoung-Jae Lee,Youngsoo Park,Dongseok Suh,Eun-Hong Lee,Sunae Seo,Dong-Chirl Kim,Ranju Jung,Bo Soo Kang,Seung-Eon Ahn,Chang Bum Lee,David H. Seo,Young-Kwan Cha,In-Kyeong Yoo,Jin-Soo Kim,Bae Ho Park +14 more
Journal ArticleDOI
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Sanghun Jeon,Seung-Eon Ahn,I-hun Song,Chang Jung Kim,U-In Chung,Eunha Lee,Inkyung Yoo,Arokia Nathan,Sungsik Lee,Khashayar Ghaffarzadeh,John Robertson,Kinam Kim +11 more
TL;DR: A gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer and is integrated in a transparent active-matrix photosensor array that has potential applications in contact-free interactive displays.
Journal ArticleDOI
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
Myoung-Jae Lee,Seungwu Han,Sang Ho Jeon,Bae Ho Park,Bo Soo Kang,Seung-Eon Ahn,Ki-Hwan Kim,Chang Bum Lee,Chang Jung Kim,In-Kyeong Yoo,David H. Seo,Xiang-Shu Li,Jong-Bong Park,Jung-Hyun Lee,Youngsoo Park +14 more
TL;DR: Through experiments on the negative resistance switching phenomenon in Pt-NiO-Pt structures, a nanofilament channels that can be electrically connected or disconnected are fabricated that are ideal for the basis for high-speed, high-density, nonvolatile memory applications.
Proceedings ArticleDOI
Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
In-Gyu Baek,D.C. Kim,Myoung-Jae Lee,H.-J. Kim,E.K. Yim,M.S. Lee,J.E. Lee,Seung-Eon Ahn,S. Seo,J.H. Lee,J.C. Park,Y.K. Cha,S.O. Park,H.S. Kim,I.K. Yoo,U-In Chung,J.T. Moon,B.I. Ryu +17 more
TL;DR: In this article, a multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application.