Patent
Method of making semiconductor-on-insulator device with closed-gate electrode
Jeremy C. Smith,James W. Miller +1 more
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TLDR
In this article, a body-tied MOSFET is used in a protection circuit of an SOI device, where the drain regions (38) lie outside the closed-gate electrode.Abstract:
A body-tied MOSFET (14) is used in a protection circuit (10) of an SOI device (20) where the MOSFET's drain regions (38) lie outside MOSFET's closed-gate electrode (34). Electrical characteristics of the body-tied MOSFET (14) can be changed by varying the ratio of the total source region area to the total body-tied region area (tie frequency). The total electrical device width is the sum of the individual source region (36) widths. More charge can be placed on the drain region (38) compared to a drain region on the inside because the interfacial area between the drain region and channel region is larger. The device (20) can be formed without having to develop new processing steps or use marginal processing steps. Body ties to an underlying substrate are unnecessary.read more
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Patent
Body-tied-to-source partially depleted SOI MOSFET
TL;DR: In this article, a silicon-on-oxide MOS transistor with an implanted region on the source side of the gate electrode for making contact with the body node is described, and a contact region of the same conductivity type as the body is formed in the source region with a minimum spacing from the patterned gate corner such that the dopant of the implant region does not diffuse into the gate and destroy the transistor.
Patent
Method for improving electrical properties of high dielectric constant films
Yanjun Ma,Yoshi Ono +1 more
TL;DR: In this article, a method of improving the electrical properties of high dielectric constant films by depositing an initial film and implanting oxygen ions to modify the film by decreasing the oxygen deficiency of the film while reducing or eliminating formation of an interfacial silicon dioxide layer is presented.
Patent
Electrostatic discharge circuit and method therefor
TL;DR: In this paper, an ESD protection circuit (81) and a method for providing eSD protection is provided, where an N-channel transistor (24) which can be ESD damaged, is selectively turned on and made conducting.
Patent
Method and apparatus for handling an ESD event on an SOI integrated circuit
TL;DR: In this article, a method and apparatus for handling an electrostatic discharge (ESD) pulse in silicon on insulator (SOI) integrated circuits is provided, which is conducted via an ESD protection circuit from a pad to a rail or node.
Patent
Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices
Ono Yoshi,Yanjun Ma +1 more
TL;DR: In this paper, a method of forming a nitrogen-implanted gate oxide in a semiconductor device includes preparing a silicon substrate; forming an oxide layer on the prepared substrate; and implanting N+ or N2 + ions into the oxide layer in a plasma immersion ion implantation apparatus.
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Silicon-on-Insulator Technology: Materials to VLSI
TL;DR: In this paper, the authors present a set of techniques for defect detection in SOI materials, including the following: 2.1.1 Silicon-on-Zirconia (SOZ), 2.2.2 E-beam recrystallization, 2.3.3, 3.4.4, and 3.5.5 Other defect assessment techniques.
Patent
Method of making a semiconductor device having a gate all around type of thin film transistor
TL;DR: In this article, a method of manufacturing a semiconductor device including forming an insulating film on a substrate, forming an opening in the insulating films by anisotropic etching, embedding a dummy member in the opening, forming a channel member over the insulator and removing the dummy member to form a gap between the channel member and the substrate, and forming a thin film on the channel members and in the gap covering the channel, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel.
Patent
Esd protection for soi circuit
TL;DR: In this article, an electrostatic discharge (ESD) protective device for SOI circuit is composed of an SOI structure containing a semiconductor material 20 conforming to the formation of a transistor therein, a conductor transmitting the signals relating to this transistor circuit and a field effect transistor 14 connected to this conductor conducting an ESD current.
Patent
Semiconductor integrated circuit device providing a protection circuit
TL;DR: In this paper, a first resistor of a low value resistance interposed between an input terminal and an input gate of the internal circuit is used to protect an internal circuit against an excessively high voltage.