Patent
Method of manufacturing semiconductor device
Nii Koji,Okada Yoshinori +1 more
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TLDR
In this article, a method of manufacturing a semiconductor device which is capable of forming a gate structure having dimensions as designed is provided, and a photoresist is applied, and is then exposed to light using a photomask (18) for defining the ends of gate structures as seen in a direction of a gate width.Abstract:
A method of manufacturing a semiconductor device which is capable of forming a gate structure having dimensions as designed is provided. A silicon oxide film (4), a polysilicon film (5) and a silicon oxide film (6) are formed in the order named on a silicon substrate (1). Then, the silicon oxide film (6) is patterned to form silicon oxide films (14a, 14b). Next, a photoresist (15) is applied, and is then exposed to light using a photomask (18) for defining the ends of gate structures (25i-25k) as seen in a direction of a gate width. Next, the photoresist (15) is developed to form openings (21s-21u). Using the photoresist (15) as an etch mask, portions of the silicon oxide films (14a, 14b) exposed in the openings (21s-21u) are etched away.read more
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References
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