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Patent

Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within the air gap of a magnetic core

TLDR
In this paper, the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected by measuring the induced voltage in the polishing wheel.
Abstract
The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil to provide a magnetic flux in the air gap. A second coil is mounted for rotation on the polishing table, in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil. The rotating coil, when it is in the air gap of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which in turn is converted to a signal which is processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer therebeneath or, conversely, when a dielectric layer has been removed to expose a metallic layer therebeneath.

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Citations
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Patent

In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing

TL;DR: In this article, an in-situ chemical-mechanical polishing process monitor apparatus for monitoring a workpiece during polishing of a silicon wafer in a polishing machine is described.
Patent

Apparatus and method for in-situ monitoring of chemical mechanical polishing operations

TL;DR: In this paper, an in-situ method of measuring uniformity of a layer on a substrate during polishing of said layer, where the method includes the steps of directing a light beam toward the layer, monitoring an interference signal produced by the light beam reflecting off of the substrate, and computing a measure of uniformity from the interference signal.
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In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization

TL;DR: In this paper, a technique and apparatus for the optical monitoring and measurement of a thin film undergoing thickness and other changes while it is rotating is described, where an optical signal is routed from a monitored area through the axis of rotation and decoupled from the monitored rotating area.
Patent

Endpoint detection apparatus and method for chemical/mechanical polishing

TL;DR: In this article, an apparatus and method for determining a selected endpoint in the polishing of layers on a workpiece in a chemical/mechanical polishing apparatus where the workpiece is rotated by a motor against a polishing pad is presented.
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In-situ monitoring of the change in thickness of films

TL;DR: In this paper, the change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected.
References
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Patent

In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection

TL;DR: In this paper, the conductivity of a semiconductor wafer during the course of a polishing process is monitored using an active and a passive electrode, both of which are embedded in the polishing pad.
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TL;DR: In this article, an automatic lapping control based on imbedding an electrode in a lap plate of a lap machine and including at least one piezoelectric wafer in the lap load is presented.
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Probe having passive means transmitting an output signal by reactive coupling

TL;DR: In this paper, a capacitative coupling was used to monitor the state of a first circuit (19) by means of a second circuit (29) with an inductive coupling linking the circuits across a gap.
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Method for controlling thickness of wafer-like work pieces under lapping and a lapping machine therefor

TL;DR: In this article, an improvement in the lapping method of wafer-like work pieces in a lapping machine to lap the work pieces by sandwiching them between relatively rotatable upper and lower surface plates, in which the thickness of work pieces under lapping is determined by an in-machine manner with a sensor mounted on the upper surface plate.
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Inductive displacement transducer using a bridge circuit having a stable voltage phase in the diagonal of the bridge

TL;DR: In this paper, an inductive displacement transducer comprising a current measuring bridge circuit including a pair of adjustable electrical resistors coupled in series relationship in one half of the bridge circuit, and a series coupled induction coils and a movable magnetic armature in the other half is presented.
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