Patent
Methods for etching an etching stop layer utilizing a cyclical etching process
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TLDR
In this article, a method for etching an etching stop layer using a cyclical etching process is described. But the method is not suitable for the case of silicon nitride, and the method requires the use of at least ammonium gas and nitrogen trifluoride.Abstract:
Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.read more
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References
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Patent
Selective etching of silicon nitride
TL;DR: In this article, the authors provided methods for etching dielectric layers comprising of silicon and nitrogen, which may include providing a substrate having a dielectrically-compensated substrate, and forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma.
Patent
Selective etch of silicon by way of metastable hydrogen termination
TL;DR: In this paper, the authors described a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor, where the plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials.
Patent
Remotely-excited fluorine and water vapor etch
TL;DR: In this paper, a method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor, which is used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride.
Patent
Method and apparatus for forming a high quality low temperature silicon nitride layer
TL;DR: In this article, a silicon nitride film is formed by thermally decomposing a silicon/nitrogen containing source gas or a silicon and nitrogen containing source gases at low deposition temperatures (e.g., less than 550°C).
Journal ArticleDOI
Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures
TL;DR: In this article, the etch rate of silicon nitride (Si3N4) and silicon dioxide (SiO2) in the afterglow of NF3 and NF3/O2 microwave discharges was characterized.