Journal ArticleDOI
Microphotoluminescence mapping of packaging-induced stress distribution in high-power AlGaAs laser diodes
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In this article, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate.Abstract:
Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate. The sensitivity of the technique (minimal equivalent hydrostatic stress that can be detected) can reach 10 MPa or better. Correlations between solder-induced stress distribution in the devices and estimated lifetimes are demonstrated.read more
Citations
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Journal ArticleDOI
Simultaneous quantification of strain and defects in high-power diode laser devices
TL;DR: In this paper, the authors applied photocurrent spectroscopy to analyze both packaging-induced strain and strain-induced defect creation in InAlGaAs/GaAs high-power diode laser arrays.
Journal ArticleDOI
Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars
TL;DR: In this paper, a detailed approach has been developed, whereby the individual performances of the emitters comprising a laser bar are assessed separately as part of a larger coupled system, where degradation of the emitter performances is only observed when the local packaging-induced strain is above a certain critical value.
Journal ArticleDOI
Spatially resolved spectroscopic strain measurements on high-power laser diode bars
Jens W. Tomm,A. Gerhardt,R. Muller,V. Malyarchuk,Y. Sainte-Marie,P. Galtier,J. Nagle,J.-P. Landesman +7 more
TL;DR: In this article, a number of strain sensitive spectroscopic techniques, namely, micro Raman, micro-Raman, microphotoluminescence, photocurrent, and electroluminecence, were applied to two AlGaAs/GaAs high-power diode laser arrays, so-called "cm-bars", and evaluated with respect to their ability to monitor and quantify the different spatial strain distributions along the devices.
Journal ArticleDOI
Spectroscopic method of strain analysis in semiconductor quantum-well devices
Mark L. Biermann,Steven Duran,Kelsey Peterson,A. Gerhardt,Jens W. Tomm,Artem Bercha,Witold Trzeciakowski +6 more
TL;DR: In this paper, a generalized, spectroscopic-based technique for analyzing the strain condition within devices based on quantum wells was proposed, which couples experimental data describing interband transition energies within strained, quantum well devices with a rigorous theoretical description of the quantum-well bandstructure.
Journal ArticleDOI
Quantitative strain analysis in AlGaAs-based devices
Jens W. Tomm,A. Gerhardt,R. Muller,Mark L. Biermann,Joseph P. Holland,D. Lorenzen,Eberhard Kaulfersch +6 more
TL;DR: In this paper, a strategy for quantitative spectroscopic analysis of packaging-induced strain using both finite element analysis and band-structure calculations is presented for a wide class of AlGaAs-based, and related, devices, among them high-power “cm-bars.
References
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Book
Theory of elasticity
TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
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Film‐edge‐induced stress in substrates
TL;DR: In this article, the problem of film-edge-induced stress in substrates has been analyzed self-consistently by allowing a distributed force in the film, which arises from the relaxation of the film strain, which is complementarily coupled to the substrate strain under the film force.
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Pressure dependence of direct and indirect optical absorption in GaAs.
TL;DR: Mesures realisees pour des pressions atteignant celle de la 1ere transition de structure pres de 17 GPa (T=300 K) : une forte augmentation de l' absorption indirecte la pression croit.
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Optical determination of strains in heterostructures: GaAs/Si as an example
TL;DR: In this paper, Raman and photoluminescence spectroscopies are used to characterize crystalline quality and interfacial strain in heterostructures, and the effect of a biaxial stress on electronic and vibronic energies is reviewed and then applied to the case of a GaAs layer.