Journal ArticleDOI
Microwave intensity and frequency modulation of heteroepitaxial-ridge- overgrown distributed feedback lasers
TLDR
In this paper, the intensity and frequency modulation response of heteroepitaxial-ridge-overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz.Abstract:
The intensity and frequency modulation response of heteroepitaxial‐ridge‐overgrown distributed feedback lasers are characterized as a function of modulation frequency from 0.2 to as high as 17 GHz. Small‐signal intensity modulation measurements show a −3 dB frequency of 7.1 GHz. Efficient frequency modulation (>0.1 GHz/mA) is demonstrated for modulation frequencies up to 13 GHz. A new standard for comparing semiconductor lasers, the chirp to modulated power ratio, is suggested as a means of comparing semiconductor lasers and as an aid to understanding the interaction of FM and IM in a semiconductor laser.read more
Citations
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Journal ArticleDOI
Linewidth broadening factor in semiconductor lasers--An overview
Marek Osinski,J. Buus +1 more
TL;DR: In this article, the authors present an overview of topics related to one of the fundamental parameters for semiconductor lasers-the linewidth broadening factor α that describes the coupling between carrier-concentration-induced variations of real and imaginary parts of susceptibility.
Journal ArticleDOI
High-speed modulation of semiconductor lasers
TL;DR: In this paper, an overview of the direct modulation performance of high-speed semiconductor lasers is given, using a cascaded two-port model of the laser, which separates the electrical parasitics from the intrinsic laser and enables these subsections to be considered separately.
Journal ArticleDOI
Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$ m
Francois Lelarge,Beatrice Dagens,J. Renaudier,Romain Brenot,Alain Accard,F. van Dijk,Dalila Make,O. Le Gouezigou,J.-G. Provost,Francis Poingt,Jean Landreau,Olivier Drisse,Estelle Derouin,B. Rousseau,Frederic Pommereau,Guang-Hua Duan +15 more
TL;DR: In this article, the InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication are summarized.
Journal ArticleDOI
High speed semiconductor laser design and performance
TL;DR: In this article, the design of semiconductor laser for efficient response to direct current modulation at microwave and millimeter wave frequencies is described and a rate equation analysis is used to relate the effect of current modulation on laser intensity and frequency.
Journal ArticleDOI
Short-pulse and high-frequency signal generation in semiconductor lasers
TL;DR: In this article, the application of high-speed semiconductors in short-pulse generation by mode locking, gain/Q-switching, and microwave signal generation is reviewed.
References
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Journal ArticleDOI
Theory of the linewidth of semiconductor lasers
TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
Journal ArticleDOI
Direct frequency modulation in AlGaAs semiconductor lasers
TL;DR: In this paper, the frequency modulation characteristics of three different AlGaAs lasers, a channeled-substrate planar (CSP), a buried-heterostructure (BH) and a transverse-junction-stripe (TJS) laser, were studied theoretically and experimentally.
Journal ArticleDOI
Measurement of the linewidth enhancement factor α of semiconductor lasers
TL;DR: In this paper, a theory of the amplitude and phase modulation characteristic of a single mode semiconductor laser is presented, where the amplitude modulation couples through the complex susceptibility of the gain medium to the phase.
Journal ArticleDOI
CO2 laser assisted UV ablative photoetching of Kapton films
TL;DR: In this article, it was suggested that the extra energy absorbed by the Kapton film from the CO2 laser enables ablation of the UV sensitized layer close to the film's surface.
Journal ArticleDOI
Heteroepitaxial ridge‐overgrown distributed feedback laser at 1.5 μm
TL;DR: In this paper, a new distributed feedback laser, the heteroepitaxial ridge-overgrown distributed feedback (HRO DFB) laser, was proposed and demonstrated, operated in stable single longitudinal mode with no observable mode partition events under 2Gb/s pseudo-random pulse modulation with dynamic spectral widths typically 0.5-2 A even with both facets cleaved.
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