Journal ArticleDOI
High speed semiconductor laser design and performance
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In this article, the design of semiconductor laser for efficient response to direct current modulation at microwave and millimeter wave frequencies is described and a rate equation analysis is used to relate the effect of current modulation on laser intensity and frequency.Abstract:
The design of semiconductor lasers for efficient response to direct current modulation at microwave and millimeter wave frequencies is described. A rate equation analysis is used to relate the effect of current modulation on laser intensity and frequency. This analysis is also used to relate the 0, 3 and 6 dB frequencies to the peak frequency and to predict the maximum bandwidth obtainable in a single longitudinal mode laser. The design of structures and packaging for millimeter wave bandwidths is also described.read more
Citations
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Journal ArticleDOI
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.
Journal ArticleDOI
Subpicosecond gain dynamics in InGaAsP optical amplifiers: Experiment and theory
TL;DR: In this paper, pump-probe measurements on bulk InGaAsP optical amplifiers are compared with numerical calculations based on simplified density matrix equations, and the gain dynamics is well described by the combined effect of carrier heating, spectral hole burning, and two-photon absorption.
Journal ArticleDOI
Subpicosecond gain dynamics in GaAlAs laser diodes
Morris P. Kesler,Erich P. Ippen +1 more
TL;DR: In this paper, a dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of the results on the dynamic response of laser diodes are discussed.
Journal ArticleDOI
Extraction of DFB laser rate equation parameters for system simulation purposes
TL;DR: In this article, a technique is described for readily extracting values of the rate equation parameters using measurements of the threshold current and the optical power, resonance frequency and damping factor for a bias current well above a threshold current.
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Observation of highly nondegenerate four-wave mixing in 1.5 mu m traveling-wave semiconductor optical amplifiers and estimation of nonlinear gain coefficient
TL;DR: In this article, the nonlinear gain coefficient epsilon, which induces a gain grating through the pump-probe beating, is estimated to be 1.75*10/sup -23/ m/sup 3/m/sup 4.
References
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Journal ArticleDOI
Theory of the linewidth of semiconductor lasers
TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
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Direct frequency modulation in AlGaAs semiconductor lasers
TL;DR: In this paper, the frequency modulation characteristics of three different AlGaAs lasers, a channeled-substrate planar (CSP), a buried-heterostructure (BH) and a transverse-junction-stripe (TJS) laser, were studied theoretically and experimentally.
Journal ArticleDOI
High-speed modulation of semiconductor lasers
TL;DR: In this paper, an overview of the direct modulation performance of high-speed semiconductor lasers is given, using a cascaded two-port model of the laser, which separates the electrical parasitics from the intrinsic laser and enables these subsections to be considered separately.
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Nature of wavelength chirping in directly modulated semiconductor lasers
Thomas L. Koch,John E. Bowers +1 more
TL;DR: In this paper, the inherent connection between frequency deviations and the optical power wave-form of a directly modulated semiconductor laser was derived, providing for the first time a quantitative assessment of inherent optical fiber dispersion penalties.
Journal ArticleDOI
Calculated spectral dependence of gain in excited GaAs
TL;DR: In this article, the calculated dependence of the gain coefficient on photon energy and excitation level in GaAs is given for 297 and 77 K. The qualitative behavior of the results is in agreement with experiment.