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Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$ m

TLDR
In this article, the InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication are summarized.
Abstract
This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in optical communication. We investigate both InAs/InP dashes in a barrier and dashes in a well (DWELL) heterostructures operating at 1.5 mum. These two types of QDs can provide high gain and low losses. Continuous-wave (CW) room-temperature lasing operation on ground state of cavity length as short as 200 mum has been achieved, demonstrating the high modal gain of the active core. A threshold current density as low as 110 A/cm2 per QD layer has been obtained for infinite-length DWELL laser. An optimized DWELL structure allows achieving of a T0 larger than 100 K for broad-area (BA) lasers, and of 80 K for single-transverse-mode lasers in the temperature range between 25degC and 85degC. Buried ridge stripe (BRS)-type single-mode distributed feedback (DFB) lasers are also demonstrated for the first time, exhibiting a side-mode suppression ratio (SMSR) as high as 45 dB. Such DFB lasers allow the first floor-free 10-Gb/s direct modulation for back-to-back and transmission over 16-km standard optical fiber. In addition, novel results are given on gain, noise, and four-wave mixing of QD-based semiconductor optical amplifiers. Furthermore, we demonstrate that QD Fabry-Perot (FP) lasers, owing to the small confinement factor and the three-dimensional (3-D) quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time-jitter characteristics when QD lasers are actively mode-locked. These advances constitute a new step toward the application of QD lasers and amplifiers to the field of optical fiber communications

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Journal ArticleDOI

High performance mode locking characteristics of single section quantum dash lasers.

TL;DR: The phase profile dependence on cavity length and injection current is experimentally evaluated, demonstrating the possibility of efficiently using the wide spectral bandwidth exhibited by these quantum dash structures for the generation of high peak power sub-picosecond pulses with low radio frequency linewidths.
Journal ArticleDOI

Single-mode tunable laser emission in the single-exciton regime from colloidal nanocrystals

TL;DR: This work demonstrates single-exciton, single-mode, spectrally tuned lasing from ensembles of optical antenna-designed, colloidal core/shell CdSe/CdS quantum rods deposited on silica microspheres, thereby inducing a large exciton–bi-Exciton energy shift.
Journal ArticleDOI

Millimeter-Wave Photonic Components for Broadband Wireless Systems

TL;DR: In this paper, a self-pulsating 60 GHz range quantum-dash Fabry-Perot mode-locked laser diodes (MLLD) for passive, i.e., photonic mm-wave generation with comparably low-phase noise level of -76 dBc/Hz @ 100-kHz offset from a 58.8-GHz carrier is presented.
Journal ArticleDOI

Recent progress in ultrafast lasers based on 2D materials as a saturable absorber

TL;DR: In this article, a review of the recent progress in ultrafast laser use of 2D materials as a saturable absorber is presented, where material characteristics, fabrication techniques, and nonlinear properties are also introduced.
References
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TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
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TL;DR: In this article, the authors discuss the propagation of light propagation in various media, including waveguide couplers and coupled-mode theory, as well as direct modulation of Semiconductor Lasers.
Journal ArticleDOI

InGaAs-GaAs quantum-dot lasers

TL;DR: The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl middot/cm/sup -2/m at 300 K as mentioned in this paper.
Journal ArticleDOI

Room-temperature operation of InAs quantum-dash lasers on InP [001]

TL;DR: In this paper, the first self-assembled InAs quantum dash lasers grown by molecular beam epitaxy on InP (001) substrates were reported, with wavelengths from 1.60 to 1.66 μm for one-, three-, and five-stack designs, a threshold current density as low as 410 A/cm2 for singlestack uncoated lasers, and a distinctly quantumwire-like dependence of the threshold current on the laser cavity orientation.
Journal ArticleDOI

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

TL;DR: In this paper, a procedure of InAs/InP quantum dots elaboration emitting at 1.55 μm by gas source molecular beam epitaxy is described, based on a modification of the capping layer growth which is deposited in two steps, separated by a growth interruption under phosphorus flux.
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