Journal ArticleDOI
Microwave silicon Schottky-barrier field-effect transistor
K.E. Drangeid,R. Jaggi,S. Middelhoek,Th. O. Mohr,A. Moser,Grazia Sasso,R. Sommerhalder,Philip Wolf +7 more
TLDR
Schottky-barrier field effect transistors have been realized in silicon epitaxial films on high-resistivity silicon substrates as mentioned in this paper, and the 1 μm wide gates are produced by projection masking techniques.Abstract:
Schottky-barrier field-effect transistors have been realised in silicon epitaxial films on high-resistivity silicon substrates. The 1 μm wide gates are produced by projection-masking techniques. The maximum transconductances observed are 42 mA/V per mm gate length; the maximum frequency of oscillation fmax was 8 GHz.read more
Citations
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Journal ArticleDOI
Microwave properties of Schottky-barrier field-effect transistors
TL;DR: In this paper, the microwave properties of the Schottky-barrier field effect transistor (MESFET) with a gate-length of one micrometer are investigated.
Journal ArticleDOI
D-MOS transistor for microwave applications
TL;DR: In this article, a new n-channel silicon MOS transistor is described that can be fabricated with channel lengths of less than 1 µ by using a double-diffusion process similar to that used in bipolar transistor fabrication.
Journal ArticleDOI
Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies
TL;DR: In this article, the noise behavior of a Schottky barrier gate field effect transistor was investigated by the use of the noise equivalent circuit, and the noise parameters were calculated by taking into account the influence of parasitic resistances.
Journal ArticleDOI
A MESFET distributed amplifier with 2 GHz bandwidth
TL;DR: In this article, a lumped distributed amplifier was built in a hybrid technique with microwave Schottky-barrier field effect transistors and tested with a flat frequency response up to about 2 GHz.
Journal ArticleDOI
Si and GaAs 0.5 μm-gate Schottky-barrier field-effect transistors
TL;DR: In this article, Si and GaAs Schottky-barrier field-effect transistors with gate lengths of 0.5 μm have been experimentally realized in the microwave range up to 20 GHz.