Proceedings ArticleDOI
Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
Binh-Minh Nguyen,Siamak Abdollahi Pour,Simeon Bogdanov,Manijeh Razeghi +3 more
- Vol. 7608, pp 760825
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TLDR
In this article, the pMp design, a novel infrared photodetector architecture that inherits the advantages of traditional photoconductive and photovoltaic devices, is presented.Abstract:
The bandstructure tunability of Type II antimonide-based superlattices has been significantly enhanced since the
introduction of the M-structure superlattice, resulting in significant improvements of Type II superlattice infrared
detectors. By using M-structure, we developed the pMp design, a novel infrared photodetector architecture that
inherits the advantages of traditional photoconductive and photovoltaic devices. This minority electron unipolar
device consists of an M-structure barrier layer blocking the transport of majority holes in a p-type
semiconductor, resulting in an electrical transport due to minority carriers with low current density. Applied for
the very long wavelength detection, at 77K, a 14μm cutoff detector exhibits a dark current 3.3 mA/cm2, a
photoresponsivity of 1.4 A/W at 50mV bias and the associated shot-noise detectivity of 4x1010 Jones.read more
Citations
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Journal ArticleDOI
Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 μm
Dongwei Jiang,Wei Xiang,Wei Xiang,Fengyun Guo,Hongyue Hao,Hongyue Hao,Xi Han,Xi Han,Xiaochao Li,Guowei Wang,Guowei Wang,Yingqiang Xu,Yingqiang Xu,Qingjiang Yu,Zhichuan Niu,Zhichuan Niu +15 more
TL;DR: In this article, the dependence of the quantum efficiency on beryllium concentration in the active region of type-II InAs/GaSb superlattice infrared detector with a cutoff wavelength around 21 μm was reported.
Proceedings ArticleDOI
Developing high-performance III-V superlattice IRFPAs for defense: challenges and solutions
TL;DR: Many technical challenges must be overcome to realize the theoretical promise of superlattice infrared materials, including further reduction in dark current density, growth of optically thick materials for high quantum efficiency, and elimination of FPA processing-related performance degradation.
Journal ArticleDOI
Limits of infrared imaging
TL;DR: In this paper, the background photon shot noise, induced by the signal itself and all other in-band surroundings, provides the fundamental infrared imaging sensitivity limit (background limited performance or BLIP), which constrains resolution angle to values greater than the ratio of the detection wavelength to the optics diameter.
References
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nBn detector, an infrared detector with reduced dark current and higher operating temperature
S. Maimon,Gary W. Wicks +1 more
TL;DR: The nBn detector as discussed by the authors eliminates the Shockley-Read-Hall generation currents and reduces the amount of dark current and noise in the detector, which enables it to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors.
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A new semiconductor superlattice
TL;DR: In this article, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role is treated theoretically, through the use of Bloch functions.
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Theory of a Wide-Gap Emitter for Transistors
TL;DR: In this paper, it was shown that the injection deficit of an emitter can be decreased by several orders of magnitude if the emitter has a higher band gap than the base region.
Journal ArticleDOI
A high-performance long wavelength superlattice complementary barrier infrared detector
David Z.-Y. Ting,Cory J. Hill,Alexander Soibel,Sam A. Keo,Jason M. Mumolo,Jean Nguyen,Sarath D. Gunapala +6 more
TL;DR: In this paper, the authors describe a long wavelength infrared detector where an InAs/GaSb superlattice absorber is surrounded by a pair of electron-blocking and hole-blocking unipolar barriers.
Journal ArticleDOI
MBE HgCdTe Technology : A Very General Solution to IR Detection, Described by Rule 07 , a Very Convenient Heuristic
TL;DR: In this paper, a simple empirical relationship, Rule 07, conveniently estimates state-of-the-art HgCdTe dark current performance over 13 orders of magnitude, covering wavelength ranges form short-wave infrared (SWIR) to long wave infrared (LWIR), from room temperature to liquid nitrogen temperatures.