Journal ArticleDOI
InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection
Reads0
Chats0
TLDR
In this article, high performance long-wavelength infrared nBn photodetectors based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate have been demonstrated.Abstract:
High performance long-wavelength infrared nBn photodetectors based on InAs/InAs1−xSbx type-II superlattices on GaSb substrate have been demonstrated. The photodetector's 50% cut-off wavelength was ∼10 μm at 77 K. The photodetector with a 6 μm-thick absorption region exhibited a peak responsivity of 4.47 A/W at 7.9 μm, corresponding to a quantum efficiency of 54% at −90 mV bias voltage under front-side illumination and without any anti-reflection coating. With an R × A of 119 Ω·cm2 and a dark current density of 4.4 × 10−4 A/cm2 under −90 mV applied bias at 77 K, the photodetector exhibited a specific detectivity of 2.8 × 1011 cm. Hz/W.read more
Citations
More filters
Journal ArticleDOI
Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor.
Xuechao Yu,Peng Yu,Di Wu,Bahadur Singh,Qingsheng Zeng,Hsin Lin,Wu Zhou,Junhao Lin,Kazu Suenaga,Zheng Liu,Qi Jie Wang +10 more
TL;DR: It is demonstrated experimentally for the first time that two-dimensional atomically thin PtSe2 has a variable bandgap in the mid-infrared via layer and defect engineering and this results pave the way foratomically thin 2D noble metal dichalcogenides to be employed in high-performance mid- Infrared optoelectronic devices.
Journal ArticleDOI
Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
Abstract: This article presents a review on the current status, challenges, and potential future development opportunities for HgCdTe infrared materials and detectortechnology. A brief history of HgCdTe infrared technology is firstly summarized and discussed, leading to the conclusion that HgCdTe-based infrared detectors will continue to be a core infrared technology with expanded capabilities in the future due to a unique combination of its favourable properties. Recent progress and the current status of HgCdTe infrared technology are reviewed, including material growth,device architecture, device processing, surface passivation, and focal plane array applications. The further development of infrared applications requires that future infrared detectors have the features of lower cost, smaller pixel size, larger array format size, higher operating temperature, and multi-band detection, which presents a number of serious challenges to current HgCdTe-based infrared technology. The primary challenges include well controlled p-type doping, lower cost, larger array format size, higher operating temperature, multi-band detection, and advanced plasma dry etching. Various new concepts and technologies are proposed and discussed that have the potential to overcome the existing primary challenges that are inhibiting the development of next generation HgCdTeinfrared detectortechnology.
Journal ArticleDOI
Emerging technologies for high performance infrared detectors
Chee Leong Tan,Hooman Mohseni +1 more
TL;DR: In this article, a review of the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides, is presented.
Journal ArticleDOI
Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection
Xuechao Yu,Yangyang Li,Xiaonan Hu,Daliang Zhang,Ye Tao,Zhixiong Liu,Yongmin He,Azimul Haque,Zheng Liu,Tom Wu,Tom Wu,Qi Jie Wang +11 more
TL;DR: This work demonstrates a mid-infrared hybrid photodetector enabled by coupling graphene with a narrow bandgap semiconductor, Ti2O3 (Eg = 0.09 eV), which achieves a high responsivity of 300 A W−1 in a broadband wavelength range up to 10 µm.
Journal ArticleDOI
Mid-wavelength high operating temperature barrier infrared detector and focal plane array
David Z. Ting,Alexander Soibel,Arezou Khoshakhlagh,Sir B. Rafol,Sam A. Keo,Linda Höglund,Anita M. Fisher,Edward M. Luong,Sarath D. Gunapala +8 more
TL;DR: In this paper, the authors analyzed and compared different aspects of InAs/InAsSb and type-II superlattices for infrared detector applications and argue that the former is the most effective when implemented for mid-wavelength infrared detectors.
References
More filters
Journal ArticleDOI
nBn detector, an infrared detector with reduced dark current and higher operating temperature
S. Maimon,Gary W. Wicks +1 more
TL;DR: The nBn detector as discussed by the authors eliminates the Shockley-Read-Hall generation currents and reduces the amount of dark current and noise in the detector, which enables it to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors.
Journal ArticleDOI
A new semiconductor superlattice
TL;DR: In this article, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role is treated theoretically, through the use of Bloch functions.
Journal ArticleDOI
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
Elizabeth H. Steenbergen,Blair C. Connelly,Grace D. Metcalfe,Hongen Shen,Michael Wraback,Dmitri Lubyshev,Yueming Qiu,Joel M. Fastenau,Amy W. K. Liu,Said Elhamri,Oray Orkun Cellek,Yong-Hang Zhang +11 more
TL;DR: In this article, a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL) was reported.
Journal ArticleDOI
Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
B. V. Olson,Eric A. Shaner,Jin K. Kim,John F. Klem,S. D. Hawkins,L. M. Murray,John P. Prineas,Michael E. Flatté,T. F. Boggess +8 more
TL;DR: In this article, the carrier recombination rates using time-resolved differential transmission are reported for an unintentionally doped mid-wave infrared InAsSb alloy and InAs/InAs Sb superlattice.
Journal ArticleDOI
Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures
TL;DR: In this paper, the minority carrier lifetime and interband absorption in mid-infrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates.
Related Papers (5)
nBn detector, an infrared detector with reduced dark current and higher operating temperature
S. Maimon,Gary W. Wicks +1 more