Journal ArticleDOI
Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers
TLDR
In this article, a new process for fabrication of vertical-cavity surface-emitting laser based on the selective conversion of high-Al composition epitaxial AlGaAs to a stable native oxide using "wet oxidation" is presented.Abstract:
Data are presented characterizing a new process for fabrication of vertical‐cavity surface‐emitting lasers based on the selective conversion of high Al composition epitaxial AlGaAs to a stable native oxide using ‘‘wet oxidation.’’ The native oxide is used to form a ring contact to the laser active region. The resulting laser active regions have dimensions of 8, 4, and 2 μm. The lowest threshold laser is achieved with the 8‐μm active region, with a minimum threshold current of 225‐μA continuous wave at room temperature.read more
Citations
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Journal ArticleDOI
Rationale and challenges for optical interconnects to electronic chips
TL;DR: Optical interconnects to silicon CMOS chips are discussed in this paper, where various arguments for introducing optical interconnections to silicon chips are summarized, and the challenges for optical, optoelectronic, and integration technologies are discussed.
Journal ArticleDOI
Recent Advances of VCSEL Photonics
TL;DR: Recent advances in VCSEL photonics for optical interconnects will be reviewed.
Journal ArticleDOI
Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
TL;DR: In this paper, an index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs.
Journal ArticleDOI
Optical interconnects to silicon
TL;DR: A brief historical summary of the development of the field of optical interconnects to silicon integrated circuits can be found in this paper, where the authors describe the evolution from early optical switching phenomena, through novel semiconductor and quantum well optical and optoelectronic physics and devices, to hybrid integrations of optical and silicon circuits.
Journal ArticleDOI
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
TL;DR: In this paper, the InGaAs single quantum well vertical-cavity surface-emitting laser with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs).
References
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Journal ArticleDOI
Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Journal ArticleDOI
Submilliamp threshold vertical‐cavity laser diodes
TL;DR: In this paper, the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents was reported.
Journal ArticleDOI
Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser
TL;DR: In this article, a new form of AlyGa1−yAs−GaAs•InxGa 1−xAs laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated.
Journal ArticleDOI
Surface‐emitting laser operation in vertical‐to‐surface transmission electrophotonic devices with a vertical cavity
TL;DR: In this paper, the first surface-emitting laser operation in a vertical-to-surface transmission electrophotonic device with a vertical cavity was demonstrated, and the threshold current during the on state was as low as 1.2 mA.
Journal ArticleDOI
Tunable extremely low threshold vertical-cavity laser diodes
TL;DR: In this paper, a three-terminal vertical-cavity laser diodes were fabricated by proton implantation and wet chemical etching, and the emission wavelength was matched to the spectral gain of the three active InGaAs quantum wells.