Journal ArticleDOI
Negative Field-Effect Mobility on (100) Si Surfaces
F. F. Fang,W. E. Howard +1 more
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This article is published in Physical Review Letters.The article was published on 1966-05-02. It has received 375 citations till now. The article focuses on the topics: Field effect.read more
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Space-Charge Effects on Electron Tunneling
D. J. BenDaniel,C. B. Duke +1 more
TL;DR: In this article, the one-electron (Bethe-Sommerfeld) model of electron tunneling is formulated to describe tunneling when the curvature (electron mass and centroid of the oneelectron constant energy surfaces vary across the junction.
Journal ArticleDOI
Theory of Quantum Transport in a Two-Dimensional Electron System under Magnetic Fields. I. Characteristics of Level Broadening and Transport under Strong Fields
Tsuneya Ando,Yasutada Uemura +1 more
TL;DR: In this paper, the authors investigated the level broadening and transverse conductivity of a two-dimensional electron system under extremely strong fields in the simplest approximation without the difficulty of divergence, in the so-called damping theoretical one.
Journal ArticleDOI
Magneto-roton theory of collective excitations in the fractional quantum Hall effect
TL;DR: In this article, a theory of the collective excitation spectrum in the fractional quantum Hall effect was presented, which is closely analogous to Feynman's theory of superfluid helium, and the predicted spectrum has a large gap at k = 0 and a deep magneto-roton minimum at finite wave vector, in excellent quantitative agreement with recent numerical calculations.
Journal ArticleDOI
Confined many-electron systems
TL;DR: In this article, the influence of spatial confinement on the physical and chemical properties of many quantum mechanical systems is discussed, including low-dimensional electron gas or impurity atoms in artificial mesoscopic scale semiconductor structures as well as atoms and molecules trapped in microscopic cavities like molecular zeolite sieves.
Journal ArticleDOI
Self-Consistent Results for a GaAs/Al x Ga 1− x As Heterojunciton. II. Low Temperature Mobility
TL;DR: In this article, the low temperature mobility of a two-dimensional system at a GaAs/Al x Ga 1-x As heterojunction was calculated in a twodimensional system.
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